Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2

Shingo Araki, Akira Misawa, Rikio Settai, Tetsuya Takeuchi, Yoshichika Onuki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

Original languageEnglish
Pages (from-to)2915-2918
Number of pages4
JournalJournal of the Physical Society of Japan
Volume67
Issue number8
Publication statusPublished - Aug 1998
Externally publishedYes

Fingerprint

thermal expansion
coefficients
Fermi surfaces
temperature dependence
electric fields
single crystals
cross sections

Keywords

  • CeRhSi
  • De Haas-van Alphen effect
  • Single crystal
  • Thermal expansion coefficient

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Araki, S., Misawa, A., Settai, R., Takeuchi, T., & Onuki, Y. (1998). Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2. Journal of the Physical Society of Japan, 67(8), 2915-2918.

Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2. / Araki, Shingo; Misawa, Akira; Settai, Rikio; Takeuchi, Tetsuya; Onuki, Yoshichika.

In: Journal of the Physical Society of Japan, Vol. 67, No. 8, 08.1998, p. 2915-2918.

Research output: Contribution to journalArticle

Araki, S, Misawa, A, Settai, R, Takeuchi, T & Onuki, Y 1998, 'Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2', Journal of the Physical Society of Japan, vol. 67, no. 8, pp. 2915-2918.
Araki S, Misawa A, Settai R, Takeuchi T, Onuki Y. Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2. Journal of the Physical Society of Japan. 1998 Aug;67(8):2915-2918.
Araki, Shingo ; Misawa, Akira ; Settai, Rikio ; Takeuchi, Tetsuya ; Onuki, Yoshichika. / Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2. In: Journal of the Physical Society of Japan. 1998 ; Vol. 67, No. 8. pp. 2915-2918.
@article{90a255ca3a744442ab703541c5142c1a,
title = "Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2",
abstract = "We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.",
keywords = "CeRhSi, De Haas-van Alphen effect, Single crystal, Thermal expansion coefficient",
author = "Shingo Araki and Akira Misawa and Rikio Settai and Tetsuya Takeuchi and Yoshichika Onuki",
year = "1998",
month = "8",
language = "English",
volume = "67",
pages = "2915--2918",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "8",

}

TY - JOUR

T1 - Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2

AU - Araki, Shingo

AU - Misawa, Akira

AU - Settai, Rikio

AU - Takeuchi, Tetsuya

AU - Onuki, Yoshichika

PY - 1998/8

Y1 - 1998/8

N2 - We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

AB - We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

KW - CeRhSi

KW - De Haas-van Alphen effect

KW - Single crystal

KW - Thermal expansion coefficient

UR - http://www.scopus.com/inward/record.url?scp=0032358986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032358986&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032358986

VL - 67

SP - 2915

EP - 2918

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 8

ER -