Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2

Shingo Araki; Akira Misawa; Rikio Settai; Tetsuya Takeuchi; Yoshichika Onuki

doi:10.1143/JPSJ.67.2915

Thermal Expansion and de Haas-van Alphen Effect of CeRh₂Si₂

Shingo Araki, Akira Misawa, Rikio Settai, Tetsuya Takeuchi, Yoshichika Onuki

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have grown single crystals of CeRh₂Si₂ and LaRh₂Si₂, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh₂Si₂ has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh₂Si₂. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

Original language	English
Pages (from-to)	2915-2918
Number of pages	4
Journal	journal of the physical society of japan
Volume	67
Issue number	8
DOIs	https://doi.org/10.1143/JPSJ.67.2915
Publication status	Published - Aug 1998
Externally published	Yes

Keywords

CeRhSi
De Haas-van Alphen effect
Single crystal
Thermal expansion coefficient

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2",

abstract = "We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.",

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author = "Shingo Araki and Akira Misawa and Rikio Settai and Tetsuya Takeuchi and Yoshichika Onuki",

year = "1998",

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T1 - Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2

AU - Araki, Shingo

AU - Misawa, Akira

AU - Settai, Rikio

AU - Takeuchi, Tetsuya

AU - Onuki, Yoshichika

PY - 1998/8

Y1 - 1998/8

N2 - We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

AB - We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

KW - CeRhSi

KW - De Haas-van Alphen effect

KW - Single crystal

KW - Thermal expansion coefficient

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