Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2

Shingo Araki, Akira Misawa, Rikio Settai, Tetsuya Takeuchi, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.

Original languageEnglish
Pages (from-to)2915-2918
Number of pages4
Journaljournal of the physical society of japan
Volume67
Issue number8
DOIs
Publication statusPublished - Aug 1998
Externally publishedYes

Keywords

  • CeRhSi
  • De Haas-van Alphen effect
  • Single crystal
  • Thermal expansion coefficient

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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