Abstract
We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.
| Original language | English |
|---|---|
| Pages (from-to) | 2915-2918 |
| Number of pages | 4 |
| Journal | Journal of the Physical Society of Japan |
| Volume | 67 |
| Issue number | 8 |
| Publication status | Published - Aug 1998 |
| Externally published | Yes |
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Keywords
- CeRhSi
- De Haas-van Alphen effect
- Single crystal
- Thermal expansion coefficient
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2. / Araki, Shingo; Misawa, Akira; Settai, Rikio; Takeuchi, Tetsuya; Onuki, Yoshichika.
In: Journal of the Physical Society of Japan, Vol. 67, No. 8, 08.1998, p. 2915-2918.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2
AU - Araki, Shingo
AU - Misawa, Akira
AU - Settai, Rikio
AU - Takeuchi, Tetsuya
AU - Onuki, Yoshichika
PY - 1998/8
Y1 - 1998/8
N2 - We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.
AB - We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient. The magnetic component of the thermal coefficient in CeRh2Si2 has been analyzed on the basis of the crystalline electric field. We have also succeeded in observing the de Haas-van Alphen (dHvA) effect of CeRh2Si2. The detected dHvA branches are small in cross-section and are observed in a narrow angle region centered at the symmetrical axis, reflecting the multiply-connected Fermi surface.
KW - CeRhSi
KW - De Haas-van Alphen effect
KW - Single crystal
KW - Thermal expansion coefficient
UR - http://www.scopus.com/inward/record.url?scp=0032358986&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032358986&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032358986
VL - 67
SP - 2915
EP - 2918
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 8
ER -