Theory and simulation of spin transport in antiferromagnetic semiconductors: Application to MnTe

K. Akabli, Y. Magnin, Masataka Oko, Isao Harada, H. T. Diep

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this paper we study the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. Here we use the Boltzmann equation with numerical data on cluster distribution obtained by Monte Carlo simulations and cluster-construction algorithms. We study the cases of degenerate and nondegenerate semiconductors. The spin resistivity in both cases is shown to depend on the temperature, with a broad maximum at the transition temperature of the lattice spin system. The shape of the maximum depends on the spin anisotropy and on the magnetic field. It shows, however, no sharp peak in contrast to ferromagnetic materials. Our method is applied to MnTe. Comparison to experimental data is given.

Original languageEnglish
Article number024428
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number2
DOIs
Publication statusPublished - Jul 18 2011

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Semiconductor materials
Ferromagnetic materials
Boltzmann equation
Superconducting transition temperature
Anisotropy
simulation
Magnetic fields
Thin films
ferromagnetic materials
Temperature
transition temperature
anisotropy
electrical resistivity
thin films
Monte Carlo simulation
magnetic fields
interactions
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Theory and simulation of spin transport in antiferromagnetic semiconductors : Application to MnTe. / Akabli, K.; Magnin, Y.; Oko, Masataka; Harada, Isao; Diep, H. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 2, 024428, 18.07.2011.

Research output: Contribution to journalArticle

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