Theoretical simulation of extreme UV radiation source for lithography

K. Fujima, K. Nishihara, T. Kawamura, H. Furukawa, T. Kagawa, F. Koike, R. More, M. Murakami, Takeshi Nishikawa, A. Sasaki, A. Sunahara, V. Zhakhovskii, T. Fujimoto, H. Tanuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A possible design window for extreme ultraviolet (EUV) radiation source has been introduced, which is needed for its realistic use for next generation lithography. For this goal, we have prepared a set of numerical simulation codes to estimate the conversion efficiency from laser energy to radiation energy with a wavelength of 13.5 nm with 2% bandwidth, which includes atomic structure, opacity and emissibity and hydro dynamics codes. The simulation explains well the observed conversion efficiency dependence of incident power using GEKKO XII laser system as well as spectral shapes. It is found that the conversion efficiency into 13.5 nm at 2% bandwidth has its maximum of a few percent at the laser intensity 1-2 × 10 11 W/cm 2.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.S. Mackay
Pages405-412
Number of pages8
Volume5374
EditionPART 1
DOIs
Publication statusPublished - 2004
EventEmerging Lithographic Technologies VIII - Santa Clara, CA, United States
Duration: Feb 24 2004Feb 26 2004

Other

OtherEmerging Lithographic Technologies VIII
CountryUnited States
CitySanta Clara, CA
Period2/24/042/26/04

Fingerprint

radiation sources
Ultraviolet radiation
Lithography
Conversion efficiency
lithography
Lasers
extreme ultraviolet radiation
lasers
bandwidth
Bandwidth
simulation
Opacity
opacity
atomic structure
Radiation
Wavelength
energy
Computer simulation
radiation
estimates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Fujima, K., Nishihara, K., Kawamura, T., Furukawa, H., Kagawa, T., Koike, F., ... Tanuma, H. (2004). Theoretical simulation of extreme UV radiation source for lithography. In R. S. Mackay (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (PART 1 ed., Vol. 5374, pp. 405-412) https://doi.org/10.1117/12.534989

Theoretical simulation of extreme UV radiation source for lithography. / Fujima, K.; Nishihara, K.; Kawamura, T.; Furukawa, H.; Kagawa, T.; Koike, F.; More, R.; Murakami, M.; Nishikawa, Takeshi; Sasaki, A.; Sunahara, A.; Zhakhovskii, V.; Fujimoto, T.; Tanuma, H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.S. Mackay. Vol. 5374 PART 1. ed. 2004. p. 405-412.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujima, K, Nishihara, K, Kawamura, T, Furukawa, H, Kagawa, T, Koike, F, More, R, Murakami, M, Nishikawa, T, Sasaki, A, Sunahara, A, Zhakhovskii, V, Fujimoto, T & Tanuma, H 2004, Theoretical simulation of extreme UV radiation source for lithography. in RS Mackay (ed.), Proceedings of SPIE - The International Society for Optical Engineering. PART 1 edn, vol. 5374, pp. 405-412, Emerging Lithographic Technologies VIII, Santa Clara, CA, United States, 2/24/04. https://doi.org/10.1117/12.534989
Fujima K, Nishihara K, Kawamura T, Furukawa H, Kagawa T, Koike F et al. Theoretical simulation of extreme UV radiation source for lithography. In Mackay RS, editor, Proceedings of SPIE - The International Society for Optical Engineering. PART 1 ed. Vol. 5374. 2004. p. 405-412 https://doi.org/10.1117/12.534989
Fujima, K. ; Nishihara, K. ; Kawamura, T. ; Furukawa, H. ; Kagawa, T. ; Koike, F. ; More, R. ; Murakami, M. ; Nishikawa, Takeshi ; Sasaki, A. ; Sunahara, A. ; Zhakhovskii, V. ; Fujimoto, T. ; Tanuma, H. / Theoretical simulation of extreme UV radiation source for lithography. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.S. Mackay. Vol. 5374 PART 1. ed. 2004. pp. 405-412
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