Theoretical simulation of extreme UV radiation source for lithography

K. Fujima; K. Nishihara; T. Kawamura; H. Furukawa; T. Kagawa; F. Koike; R. More; M. Murakami; T. Nishikawa; A. Sasaki; A. Sunahara; V. Zhakhovskii; T. Fujimoto; H. Tanuma

doi:10.1117/12.534989

Theoretical simulation of extreme UV radiation source for lithography

K. Fujima, K. Nishihara, T. Kawamura, H. Furukawa, T. Kagawa, F. Koike, R. More, M. Murakami, T. Nishikawa, A. Sasaki, A. Sunahara, V. Zhakhovskii, T. Fujimoto, H. Tanuma

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

A possible design window for extreme ultraviolet (EUV) radiation source has been introduced, which is needed for its realistic use for next generation lithography. For this goal, we have prepared a set of numerical simulation codes to estimate the conversion efficiency from laser energy to radiation energy with a wavelength of 13.5 nm with 2% bandwidth, which includes atomic structure, opacity and emissibity and hydro dynamics codes. The simulation explains well the observed conversion efficiency dependence of incident power using GEKKO XII laser system as well as spectral shapes. It is found that the conversion efficiency into 13.5 nm at 2% bandwidth has its maximum of a few percent at the laser intensity 1-2 × 10 ¹¹ W/cm ².

Original language	English
Pages (from-to)	405-412
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5374
Issue number	PART 1
DOIs	https://doi.org/10.1117/12.534989
Publication status	Published - 2004
Event	Emerging Lithographic Technologies VIII - Santa Clara, CA, United States Duration: Feb 24 2004 → Feb 26 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Fujima, K., Nishihara, K., Kawamura, T., Furukawa, H., Kagawa, T., Koike, F., More, R., Murakami, M., Nishikawa, T., Sasaki, A., Sunahara, A., Zhakhovskii, V., Fujimoto, T., & Tanuma, H. (2004). Theoretical simulation of extreme UV radiation source for lithography. Proceedings of SPIE - The International Society for Optical Engineering, 5374(PART 1), 405-412. https://doi.org/10.1117/12.534989

Fujima, K, Nishihara, K, Kawamura, T, Furukawa, H, Kagawa, T, Koike, F, More, R, Murakami, M, Nishikawa, T, Sasaki, A, Sunahara, A, Zhakhovskii, V, Fujimoto, T & Tanuma, H 2004, 'Theoretical simulation of extreme UV radiation source for lithography', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5374, no. PART 1, pp. 405-412. https://doi.org/10.1117/12.534989

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AU - Fujima, K.

AU - Nishihara, K.

AU - Kawamura, T.

AU - Furukawa, H.

AU - Kagawa, T.

AU - Koike, F.

AU - More, R.

AU - Murakami, M.

AU - Nishikawa, T.

AU - Sasaki, A.

AU - Sunahara, A.

AU - Zhakhovskii, V.

AU - Fujimoto, T.

AU - Tanuma, H.

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AB - A possible design window for extreme ultraviolet (EUV) radiation source has been introduced, which is needed for its realistic use for next generation lithography. For this goal, we have prepared a set of numerical simulation codes to estimate the conversion efficiency from laser energy to radiation energy with a wavelength of 13.5 nm with 2% bandwidth, which includes atomic structure, opacity and emissibity and hydro dynamics codes. The simulation explains well the observed conversion efficiency dependence of incident power using GEKKO XII laser system as well as spectral shapes. It is found that the conversion efficiency into 13.5 nm at 2% bandwidth has its maximum of a few percent at the laser intensity 1-2 × 10 11 W/cm 2.

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Theoretical simulation of extreme UV radiation source for lithography

Abstract

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