Abstract
A Si microstructure on a Si (1 1 1) 7 × 7 surface was investigated by a noncontact atomic force microscopy (ncAFM) and a scanning Kelvin probe microscopy (SKPM) in ultra high vacuum. The Si microstructure was generated by intermittent contact of a cantilever tip. It was found by the ncAFM and SKPM observations that the Si mound with a height of 1 Å and a width of 30 nm was generated, and the surface potential of the small mound was 0.1 V lower than that of the 7 × 7 domain. A quenched Si (1 1 1) surface was also observed by the ncAFM and SKPM. The differences in height and potential between the reconstructed 7 × 7 and the disordered 1 × 1 domains were about 1 Å and 0.1 V, respectively. Therefore, it was concluded that there appeared the disordered 1 × 1 structure on the surface of the Si small mound, lowering the surface potential by 0.1 V.
| Original language | English |
|---|---|
| Pages (from-to) | 218-222 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 202 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - Dec 30 2002 |
| Externally published | Yes |
Keywords
- Contact
- Nanostructure
- SKPM
- Si (1 1 1)
- Surface potential
- ncAFM
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films