The surface potential of the Si nanostructure on a Si (1 1 1) 7 × 7 surface generated by contact of a cantilever tip

Tadashi Shiota, K. Nakayama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A Si microstructure on a Si (1 1 1) 7 × 7 surface was investigated by a noncontact atomic force microscopy (ncAFM) and a scanning Kelvin probe microscopy (SKPM) in ultra high vacuum. The Si microstructure was generated by intermittent contact of a cantilever tip. It was found by the ncAFM and SKPM observations that the Si mound with a height of 1 Å and a width of 30 nm was generated, and the surface potential of the small mound was 0.1 V lower than that of the 7 × 7 domain. A quenched Si (1 1 1) surface was also observed by the ncAFM and SKPM. The differences in height and potential between the reconstructed 7 × 7 and the disordered 1 × 1 domains were about 1 Å and 0.1 V, respectively. Therefore, it was concluded that there appeared the disordered 1 × 1 structure on the surface of the Si small mound, lowering the surface potential by 0.1 V.

Original languageEnglish
Pages (from-to)218-222
Number of pages5
JournalApplied Surface Science
Volume202
Issue number3-4
DOIs
Publication statusPublished - Dec 30 2002
Externally publishedYes

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Surface potential
Atomic force microscopy
Nanostructures
Microscopic examination
Scanning
Microstructure
Ultrahigh vacuum

Keywords

  • Contact
  • Nanostructure
  • ncAFM
  • Si (1 1 1)
  • SKPM
  • Surface potential

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

The surface potential of the Si nanostructure on a Si (1 1 1) 7 × 7 surface generated by contact of a cantilever tip. / Shiota, Tadashi; Nakayama, K.

In: Applied Surface Science, Vol. 202, No. 3-4, 30.12.2002, p. 218-222.

Research output: Contribution to journalArticle

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N2 - A Si microstructure on a Si (1 1 1) 7 × 7 surface was investigated by a noncontact atomic force microscopy (ncAFM) and a scanning Kelvin probe microscopy (SKPM) in ultra high vacuum. The Si microstructure was generated by intermittent contact of a cantilever tip. It was found by the ncAFM and SKPM observations that the Si mound with a height of 1 Å and a width of 30 nm was generated, and the surface potential of the small mound was 0.1 V lower than that of the 7 × 7 domain. A quenched Si (1 1 1) surface was also observed by the ncAFM and SKPM. The differences in height and potential between the reconstructed 7 × 7 and the disordered 1 × 1 domains were about 1 Å and 0.1 V, respectively. Therefore, it was concluded that there appeared the disordered 1 × 1 structure on the surface of the Si small mound, lowering the surface potential by 0.1 V.

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