The phase transition pressures of zincsulfoselenide single crystals

Shirley R. Tiong, Makoto Hiramatsu, Yasushi Matsushima, Eiji Ito

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.

Original languageEnglish
Pages (from-to)291-292
Number of pages2
JournalJapanese Journal of Applied Physics
Volume28
Issue number2 R
DOIs
Publication statusPublished - 1989

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transition pressure
Phase transitions
Single crystals
single crystals
transition points
anvils
Chemical analysis

Keywords

  • Cubic anvil
  • High pressure
  • Phase transition
  • Semiconductor
  • Zincsulfoselenide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

The phase transition pressures of zincsulfoselenide single crystals. / Tiong, Shirley R.; Hiramatsu, Makoto; Matsushima, Yasushi; Ito, Eiji.

In: Japanese Journal of Applied Physics, Vol. 28, No. 2 R, 1989, p. 291-292.

Research output: Contribution to journalArticle

Tiong, Shirley R. ; Hiramatsu, Makoto ; Matsushima, Yasushi ; Ito, Eiji. / The phase transition pressures of zincsulfoselenide single crystals. In: Japanese Journal of Applied Physics. 1989 ; Vol. 28, No. 2 R. pp. 291-292.
@article{0578d9d72fc947c980d49b7daacbef46,
title = "The phase transition pressures of zincsulfoselenide single crystals",
abstract = "The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.",
keywords = "Cubic anvil, High pressure, Phase transition, Semiconductor, Zincsulfoselenide",
author = "Tiong, {Shirley R.} and Makoto Hiramatsu and Yasushi Matsushima and Eiji Ito",
year = "1989",
doi = "10.1143/JJAP.28.291",
language = "English",
volume = "28",
pages = "291--292",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",
number = "2 R",

}

TY - JOUR

T1 - The phase transition pressures of zincsulfoselenide single crystals

AU - Tiong, Shirley R.

AU - Hiramatsu, Makoto

AU - Matsushima, Yasushi

AU - Ito, Eiji

PY - 1989

Y1 - 1989

N2 - The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.

AB - The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.

KW - Cubic anvil

KW - High pressure

KW - Phase transition

KW - Semiconductor

KW - Zincsulfoselenide

UR - http://www.scopus.com/inward/record.url?scp=0011807647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0011807647&partnerID=8YFLogxK

U2 - 10.1143/JJAP.28.291

DO - 10.1143/JJAP.28.291

M3 - Article

AN - SCOPUS:0011807647

VL - 28

SP - 291

EP - 292

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 R

ER -