The phase transition pressures of zincsulfoselenide single crystals

Shirley R. Tiong; Makoto Hiramatsu; Yasushi Matsushima; Eiji Ito

doi:10.1143/JJAP.28.291

The phase transition pressures of zincsulfoselenide single crystals

Shirley R. Tiong, Makoto Hiramatsu, Yasushi Matsushima, Eiji Ito

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The static phase transition points of ZnSe and ZnSe_xS_1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSe_xS_1-x.

Original language	English
Pages (from-to)	291-292
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	2 R
DOIs	https://doi.org/10.1143/JJAP.28.291
Publication status	Published - Feb 1989

Keywords

Cubic anvil
High pressure
Phase transition
Semiconductor
Zincsulfoselenide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.28.291

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abstract = "The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.",

keywords = "Cubic anvil, High pressure, Phase transition, Semiconductor, Zincsulfoselenide",

author = "Tiong, {Shirley R.} and Makoto Hiramatsu and Yasushi Matsushima and Eiji Ito",

year = "1989",

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AU - Tiong, Shirley R.

AU - Hiramatsu, Makoto

AU - Matsushima, Yasushi

AU - Ito, Eiji

PY - 1989/2

Y1 - 1989/2

N2 - The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.

AB - The static phase transition points of ZnSe and ZnSexS1-x(0.40 ≤ x ≤ 1) single crystals in the high pressure region are determined based on the transformation pressures of Bi I-II, Bi III-V, and ZnS using the cubic anvil method where the pressure-induced variation of resistance is measured. The transition pressures of the samples vary almost linearly with the composition of ZnS in ZnSexS1-x.

KW - Cubic anvil

KW - High pressure

KW - Phase transition

KW - Semiconductor

KW - Zincsulfoselenide

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 2 R

ER -

The phase transition pressures of zincsulfoselenide single crystals

Abstract

Keywords

ASJC Scopus subject areas

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