Abstract
The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - International NanoElectronics Conference, INEC |
| DOIs | |
| Publication status | Published - 2011 |
| Externally published | Yes |
| Event | 4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China Duration: Jun 21 2011 → Jun 24 2011 |
Other
| Other | 4th IEEE International Nanoelectronics Conference, INEC 2011 |
|---|---|
| Country | Taiwan, Province of China |
| City | Tao-Yuan |
| Period | 6/21/11 → 6/24/11 |
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Keywords
- molecular beam
- TEM
- Zinc oxidation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation. / Tokunaga, T.; Sasaki, K.; Kuroda, K.; Iijima, T.; Jang, B.; Hayashi, Yasuhiko; Afre, R. A.; Tanemura, M.
Proceedings - International NanoElectronics Conference, INEC. 2011. 5991618.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation
AU - Tokunaga, T.
AU - Sasaki, K.
AU - Kuroda, K.
AU - Iijima, T.
AU - Jang, B.
AU - Hayashi, Yasuhiko
AU - Afre, R. A.
AU - Tanemura, M.
PY - 2011
Y1 - 2011
N2 - The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.
AB - The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.
KW - molecular beam
KW - TEM
KW - Zinc oxidation
UR - http://www.scopus.com/inward/record.url?scp=80052975090&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052975090&partnerID=8YFLogxK
U2 - 10.1109/INEC.2011.5991618
DO - 10.1109/INEC.2011.5991618
M3 - Conference contribution
SN - 9781457703799
BT - Proceedings - International NanoElectronics Conference, INEC
ER -