The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation

T. Tokunaga, K. Sasaki, K. Kuroda, T. Iijima, B. Jang, Y. Hayashi, R. A. Afre, M. Tanemura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - Sep 26 2011
Externally publishedYes
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China
Duration: Jun 21 2011Jun 24 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan, Province of China
CityTao-Yuan
Period6/21/116/24/11

Keywords

  • TEM
  • Zinc oxidation
  • molecular beam

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Tokunaga, T., Sasaki, K., Kuroda, K., Iijima, T., Jang, B., Hayashi, Y., Afre, R. A., & Tanemura, M. (2011). The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991618] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991618