The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation

T. Tokunaga; K. Sasaki; K. Kuroda; T. Iijima; B. Jang; Y. Hayashi; R. A. Afre; M. Tanemura

doi:10.1109/INEC.2011.5991618

The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation

T. Tokunaga, K. Sasaki, K. Kuroda, T. Iijima, B. Jang, Y. Hayashi, R. A. Afre, M. Tanemura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991618
Publication status	Published - 2011
Externally published	Yes
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China Duration: Jun 21 2011 → Jun 24 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country	Taiwan, Province of China
City	Tao-Yuan
Period	6/21/11 → 6/24/11

Keywords

TEM
Zinc oxidation
molecular beam

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2011.5991618

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Tokunaga, T., Sasaki, K., Kuroda, K., Iijima, T., Jang, B., Hayashi, Y., Afre, R. A., & Tanemura, M. (2011). The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991618] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991618

The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation. / Tokunaga, T.; Sasaki, K.; Kuroda, K.; Iijima, T.; Jang, B.; Hayashi, Y.; Afre, R. A.; Tanemura, M.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991618 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tokunaga, T, Sasaki, K, Kuroda, K, Iijima, T, Jang, B, Hayashi, Y, Afre, RA & Tanemura, M 2011, The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991618, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, Province of China, 6/21/11. https://doi.org/10.1109/INEC.2011.5991618

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title = "The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation",

abstract = "The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.",

keywords = "TEM, Zinc oxidation, molecular beam",

author = "T. Tokunaga and K. Sasaki and K. Kuroda and T. Iijima and B. Jang and Y. Hayashi and Afre, {R. A.} and M. Tanemura",

year = "2011",

doi = "10.1109/INEC.2011.5991618",

language = "English",

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series = "Proceedings - International NanoElectronics Conference, INEC",

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T1 - The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation

AU - Tokunaga, T.

AU - Sasaki, K.

AU - Kuroda, K.

AU - Iijima, T.

AU - Jang, B.

AU - Hayashi, Y.

AU - Afre, R. A.

AU - Tanemura, M.

PY - 2011

Y1 - 2011

N2 - The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.

AB - The Zn nanowires covered with ZnO were grown by oxygen plasma-assisted molecular beam irradiation method and characterized, was reported. To grow these nanowires, oxygen plasma was irradiated to Zn thin film evaporated on Si(100) substrate. Scanning electron microscopy and transmission electron microscopy observation results of nanowires revealed that the nanowire has diameter of 80 nm, and nanowires was constructed with crystalline ZnO. Moreover NWs surface was covered by crystalline ZnO. Further Zn and ZnO orientation was coincident and resulted the ZnO appeared by oxidation of Zn nanowires.

KW - TEM

KW - Zinc oxidation

KW - molecular beam

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U2 - 10.1109/INEC.2011.5991618

DO - 10.1109/INEC.2011.5991618

M3 - Conference contribution

AN - SCOPUS:80052975090

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

The growth and characterization of Zn nanowires covered with ZnO using plasma-assisted molecular beam irradiation

Abstract

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Keywords

ASJC Scopus subject areas

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