The formation of a (111) texture of the diamond film on Pt/TiO2/SiOx/Si substrate by microwave plasma chemical vapor deposition

Yasuhiko Hayashi; Yoshinori Matsushita; Tetsuo Soga; Masayoshi Umeno; Takashi Jimbo

doi:10.1016/S0925-9635(02)00021-3

The formation of a (111) texture of the diamond film on Pt/TiO₂/SiO_x/Si substrate by microwave plasma chemical vapor deposition

Yasuhiko Hayashi, Yoshinori Matsushita, Tetsuo Soga, Masayoshi Umeno, Takashi Jimbo

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Heteroepitaxial diamond films were grown on Pt(111)/Si with a SiO_x intermediate layer between them to prevent silicidation by microwave plasma enhanced chemical vapor deposition. We found that adhesion of Pt films could be improved by depositing a TiO₂ thin film between Pt and SiO_x. During the diamond growth, the change of preferred orientation of the Pt film was observed by X-ray diffraction (XRD) measurements. The films grown on a Pt(111)/SiO_x/Si substrate had a (111)-oriented diamond with full-width at half-maximum (FWHM) values of 3-5° in XRD rocking curve of diamond(111) diffraction. Raman spectroscopy revealed that the FWHM of the diamond peak at 1332.8 cm^-1 was approximately 7-10 cm^-1 over the growth temperature range 700-850 °C. All the films contained disordered graphitic carbon components or an amorphous carbon phase.

Original language	English
Pages (from-to)	499-503
Number of pages	5
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(02)00021-3
Publication status	Published - Mar 2002
Externally published	Yes

Keywords

Diamond growth and characterization
Heteroepitaxial diamond
MPECVD
Pt/TiO/SiO/Si

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-9635(02)00021-3

Cite this

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title = "The formation of a (111) texture of the diamond film on Pt/TiO2/SiOx/Si substrate by microwave plasma chemical vapor deposition",

abstract = "Heteroepitaxial diamond films were grown on Pt(111)/Si with a SiOx intermediate layer between them to prevent silicidation by microwave plasma enhanced chemical vapor deposition. We found that adhesion of Pt films could be improved by depositing a TiO2 thin film between Pt and SiOx. During the diamond growth, the change of preferred orientation of the Pt film was observed by X-ray diffraction (XRD) measurements. The films grown on a Pt(111)/SiOx/Si substrate had a (111)-oriented diamond with full-width at half-maximum (FWHM) values of 3-5° in XRD rocking curve of diamond(111) diffraction. Raman spectroscopy revealed that the FWHM of the diamond peak at 1332.8 cm-1 was approximately 7-10 cm-1 over the growth temperature range 700-850 °C. All the films contained disordered graphitic carbon components or an amorphous carbon phase.",

keywords = "Diamond growth and characterization, Heteroepitaxial diamond, MPECVD, Pt/TiO/SiO/Si",

author = "Yasuhiko Hayashi and Yoshinori Matsushita and Tetsuo Soga and Masayoshi Umeno and Takashi Jimbo",

year = "2002",

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language = "English",

volume = "11",

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journal = "Diamond and Related Materials",

issn = "0925-9635",

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T1 - The formation of a (111) texture of the diamond film on Pt/TiO2/SiOx/Si substrate by microwave plasma chemical vapor deposition

AU - Hayashi, Yasuhiko

AU - Matsushita, Yoshinori

AU - Soga, Tetsuo

AU - Umeno, Masayoshi

AU - Jimbo, Takashi

PY - 2002/3

Y1 - 2002/3

N2 - Heteroepitaxial diamond films were grown on Pt(111)/Si with a SiOx intermediate layer between them to prevent silicidation by microwave plasma enhanced chemical vapor deposition. We found that adhesion of Pt films could be improved by depositing a TiO2 thin film between Pt and SiOx. During the diamond growth, the change of preferred orientation of the Pt film was observed by X-ray diffraction (XRD) measurements. The films grown on a Pt(111)/SiOx/Si substrate had a (111)-oriented diamond with full-width at half-maximum (FWHM) values of 3-5° in XRD rocking curve of diamond(111) diffraction. Raman spectroscopy revealed that the FWHM of the diamond peak at 1332.8 cm-1 was approximately 7-10 cm-1 over the growth temperature range 700-850 °C. All the films contained disordered graphitic carbon components or an amorphous carbon phase.

AB - Heteroepitaxial diamond films were grown on Pt(111)/Si with a SiOx intermediate layer between them to prevent silicidation by microwave plasma enhanced chemical vapor deposition. We found that adhesion of Pt films could be improved by depositing a TiO2 thin film between Pt and SiOx. During the diamond growth, the change of preferred orientation of the Pt film was observed by X-ray diffraction (XRD) measurements. The films grown on a Pt(111)/SiOx/Si substrate had a (111)-oriented diamond with full-width at half-maximum (FWHM) values of 3-5° in XRD rocking curve of diamond(111) diffraction. Raman spectroscopy revealed that the FWHM of the diamond peak at 1332.8 cm-1 was approximately 7-10 cm-1 over the growth temperature range 700-850 °C. All the films contained disordered graphitic carbon components or an amorphous carbon phase.

KW - Diamond growth and characterization

KW - Heteroepitaxial diamond

KW - MPECVD

KW - Pt/TiO/SiO/Si

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JO - Diamond and Related Materials

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