The formation of a (111) texture of the diamond film on Pt/TiO2/SiOx/Si substrate by microwave plasma chemical vapor deposition

Yasuhiko Hayashi, Yoshinori Matsushita, Tetsuo Soga, Masayoshi Umeno, Takashi Jimbo

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Heteroepitaxial diamond films were grown on Pt(111)/Si with a SiOx intermediate layer between them to prevent silicidation by microwave plasma enhanced chemical vapor deposition. We found that adhesion of Pt films could be improved by depositing a TiO2 thin film between Pt and SiOx. During the diamond growth, the change of preferred orientation of the Pt film was observed by X-ray diffraction (XRD) measurements. The films grown on a Pt(111)/SiOx/Si substrate had a (111)-oriented diamond with full-width at half-maximum (FWHM) values of 3-5° in XRD rocking curve of diamond(111) diffraction. Raman spectroscopy revealed that the FWHM of the diamond peak at 1332.8 cm-1 was approximately 7-10 cm-1 over the growth temperature range 700-850 °C. All the films contained disordered graphitic carbon components or an amorphous carbon phase.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalDiamond and Related Materials
Issue number3-6
Publication statusPublished - Mar 2002
Externally publishedYes


  • Diamond growth and characterization
  • Heteroepitaxial diamond
  • Pt/TiO/SiO/Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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