Heteroepitaxial diamond films were grown on Pt(111)/Si with a SiOx intermediate layer between them to prevent silicidation by microwave plasma enhanced chemical vapor deposition. We found that adhesion of Pt films could be improved by depositing a TiO2 thin film between Pt and SiOx. During the diamond growth, the change of preferred orientation of the Pt film was observed by X-ray diffraction (XRD) measurements. The films grown on a Pt(111)/SiOx/Si substrate had a (111)-oriented diamond with full-width at half-maximum (FWHM) values of 3-5° in XRD rocking curve of diamond(111) diffraction. Raman spectroscopy revealed that the FWHM of the diamond peak at 1332.8 cm-1 was approximately 7-10 cm-1 over the growth temperature range 700-850 °C. All the films contained disordered graphitic carbon components or an amorphous carbon phase.
- Diamond growth and characterization
- Heteroepitaxial diamond
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering