The electronic states of platinum-hydrogen defects and hydrogen motion in Si observed by DLTS and IR techniques under uniaxial stress

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	258-274
Number of pages	17
Journal	Proc. of The Forum on the Science and Technology of Silicon Materials 2007
Publication status	Published - 2007

Cite this

@article{56e5d1dd55f0467a9d8f2e2263c046ae,

title = "The electronic states of platinum-hydrogen defects and hydrogen motion in Si observed by DLTS and IR techniques under uniaxial stress",

author = "Yoshifumi Yamashita",

year = "2007",

language = "English",

pages = "258--274",

journal = "Proc. of The Forum on the Science and Technology of Silicon Materials 2007",

}

TY - JOUR

T1 - The electronic states of platinum-hydrogen defects and hydrogen motion in Si observed by DLTS and IR techniques under uniaxial stress

AU - Yamashita, Yoshifumi

PY - 2007

Y1 - 2007

M3 - Article

SP - 258

EP - 274

JO - Proc. of The Forum on the Science and Technology of Silicon Materials 2007

JF - Proc. of The Forum on the Science and Technology of Silicon Materials 2007

ER -