The charging mechanism of insulated electrode in negative-ion implantation

Shigeki Sakai, Yasuhito Gotoh, Hiroshi Tsuji, Yoshitaka Toyota, Junzo Ishikawa, Masayasu Tanjyo, Koji Matsuda

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The wafer charging during ion implantation is a serious problem with greater levels of circuit integration in semiconductor device fibracations. Positive charges are accumulated on insulated electrodes or insulators and cause dielectric breakdown if there is no compensation of charging. Ion implantation with negative ions is one of the hopeful techniques to solve this problem. Since an incident ion is a negative charge, an incoming negative charge and an outgoing negative charge of secondary electrons will achieve electrical equilibrium on the insulated electrode. Therefore the charging voltage is extremely low because of this electrical equilibrium. We have measured the charging voltage at several energies of negative ions and also simulated the charging voltage with varying secondary-electron emission factor. We have found that the charging voltage depends on the secondary-electron emission factor.

Original languageEnglish
Pages (from-to)43-47
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume96
Issue number1-2
DOIs
Publication statusPublished - Mar 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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