Terahertz radiation from amorphous GaAs thin film photoconductive switches

T. Kiwa; I. Kawashima; M. Morimoto; H. Saijyo; S. Nashima; M. Yamashita; M. Tonouchi; M. Hangyo

doi:10.1109/CLEOPR.1999.811513

Terahertz radiation from amorphous GaAs thin film photoconductive switches

T. Kiwa, I. Kawashima, M. Morimoto, H. Saijyo, S. Nashima, M. Yamashita, M. Tonouchi, M. Hangyo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.

Original language	English
Title of host publication	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	447-448
Number of pages	2
ISBN (Electronic)	0780356616, 9780780356610
DOIs	https://doi.org/10.1109/CLEOPR.1999.811513
Publication status	Published - 1999
Externally published	Yes
Event	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: Aug 30 1999 → Sep 3 1999

Publication series

Name	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume	2

Conference

Conference	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/Territory	Korea, Republic of
City	Seoul
Period	8/30/99 → 9/3/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Physics and Astronomy(all)

Access to Document

10.1109/CLEOPR.1999.811513

Cite this

Kiwa, T., Kawashima, I., Morimoto, M., Saijyo, H., Nashima, S., Yamashita, M., Tonouchi, M., & Hangyo, M. (1999). Terahertz radiation from amorphous GaAs thin film photoconductive switches. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 447-448). [811513] (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.811513

Terahertz radiation from amorphous GaAs thin film photoconductive switches. / Kiwa, T.; Kawashima, I.; Morimoto, M. et al.

CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. p. 447-448 811513 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kiwa, T, Kawashima, I, Morimoto, M, Saijyo, H, Nashima, S, Yamashita, M, Tonouchi, M & Hangyo, M 1999, Terahertz radiation from amorphous GaAs thin film photoconductive switches. in CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics., 811513, CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 447-448, 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999, Seoul, Korea, Republic of, 8/30/99. https://doi.org/10.1109/CLEOPR.1999.811513

Kiwa T, Kawashima I, Morimoto M, Saijyo H, Nashima S, Yamashita M et al. Terahertz radiation from amorphous GaAs thin film photoconductive switches. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc. 1999. p. 447-448. 811513. (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics). doi: 10.1109/CLEOPR.1999.811513

@inproceedings{d2a2c4207cda411097c0dc56c8e233e1,

title = "Terahertz radiation from amorphous GaAs thin film photoconductive switches",

abstract = "Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.",

author = "T. Kiwa and I. Kawashima and M. Morimoto and H. Saijyo and S. Nashima and M. Yamashita and M. Tonouchi and M. Hangyo",

year = "1999",

doi = "10.1109/CLEOPR.1999.811513",

language = "English",

series = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "447--448",

booktitle = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

note = "1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 ; Conference date: 30-08-1999 Through 03-09-1999",

}

TY - GEN

T1 - Terahertz radiation from amorphous GaAs thin film photoconductive switches

AU - Kiwa, T.

AU - Kawashima, I.

AU - Morimoto, M.

AU - Saijyo, H.

AU - Nashima, S.

AU - Yamashita, M.

AU - Tonouchi, M.

AU - Hangyo, M.

PY - 1999

Y1 - 1999

N2 - Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.

AB - Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.

UR - http://www.scopus.com/inward/record.url?scp=0033351946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033351946&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.1999.811513

DO - 10.1109/CLEOPR.1999.811513

M3 - Conference contribution

AN - SCOPUS:0033351946

T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

SP - 447

EP - 448

BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999

Y2 - 30 August 1999 through 3 September 1999

ER -

Terahertz radiation from amorphous GaAs thin film photoconductive switches

Abstract

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Conference

ASJC Scopus subject areas

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