TY - GEN
T1 - Terahertz radiation from amorphous GaAs thin film photoconductive switches
AU - Kiwa, T.
AU - Kawashima, I.
AU - Morimoto, M.
AU - Saijyo, H.
AU - Nashima, S.
AU - Yamashita, M.
AU - Tonouchi, M.
AU - Hangyo, M.
PY - 1999
Y1 - 1999
N2 - Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.
AB - Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.
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U2 - 10.1109/CLEOPR.1999.811513
DO - 10.1109/CLEOPR.1999.811513
M3 - Conference contribution
AN - SCOPUS:0033351946
T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
SP - 447
EP - 448
BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Y2 - 30 August 1999 through 3 September 1999
ER -