Abstract
In this study, THz radiation was successfully obtained from the α-GaAs photoconductive switches. The emission properties as well as the results of the time-domain reflection pump-probe measurement revealed that the α-GaAs thin films prepared at low temperature by the pulsed laser deposition (PLD) can work as the excellent optoelectronic materials for the sub-THz microwave photonic devices.
| Original language | English |
|---|---|
| Title of host publication | Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest |
| Publisher | IEEE |
| Pages | 447-448 |
| Number of pages | 2 |
| Volume | 2 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99) - Seoul, South Korea Duration: Aug 30 1999 → Sep 3 1999 |
Other
| Other | Proceedings of the 1999 Pacific Rim Conference on Lasers and Electro-Optcis (CLEO/PACIFIC Rim '99) |
|---|---|
| City | Seoul, South Korea |
| Period | 8/30/99 → 9/3/99 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Terahertz radiation from amorphous GaAs thin film photoconductive switches. / Kiwa, Toshihiko; Kawashima, Ichiro; Morimoto, Masahiko; Saijyo, Hitoshi; Nashima, Shigeki; Yamashita, Masatsugu; Tonouchi, Masayoshi; Hangyo, Masanori.
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. Vol. 2 IEEE, 1999. p. 447-448.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Terahertz radiation from amorphous GaAs thin film photoconductive switches
AU - Kiwa, Toshihiko
AU - Kawashima, Ichiro
AU - Morimoto, Masahiko
AU - Saijyo, Hitoshi
AU - Nashima, Shigeki
AU - Yamashita, Masatsugu
AU - Tonouchi, Masayoshi
AU - Hangyo, Masanori
PY - 1999
Y1 - 1999
N2 - In this study, THz radiation was successfully obtained from the α-GaAs photoconductive switches. The emission properties as well as the results of the time-domain reflection pump-probe measurement revealed that the α-GaAs thin films prepared at low temperature by the pulsed laser deposition (PLD) can work as the excellent optoelectronic materials for the sub-THz microwave photonic devices.
AB - In this study, THz radiation was successfully obtained from the α-GaAs photoconductive switches. The emission properties as well as the results of the time-domain reflection pump-probe measurement revealed that the α-GaAs thin films prepared at low temperature by the pulsed laser deposition (PLD) can work as the excellent optoelectronic materials for the sub-THz microwave photonic devices.
UR - http://www.scopus.com/inward/record.url?scp=0033351946&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033351946&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0033351946
VL - 2
SP - 447
EP - 448
BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
PB - IEEE
ER -