Terahertz radiation from amorphous GaAs thin film photoconductive switches

T. Kiwa, I. Kawashima, M. Morimoto, H. Saijyo, S. Nashima, M. Yamashita, M. Tonouchi, M. Hangyo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 °C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (α-) GaAs prepared at between room temperature and 250 °C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages447-448
Number of pages2
ISBN (Electronic)0780356616, 9780780356610
DOIs
Publication statusPublished - 1999
Externally publishedYes
Event1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of
Duration: Aug 30 1999Sep 3 1999

Publication series

NameCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume2

Conference

Conference1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
CountryKorea, Republic of
CitySeoul
Period8/30/999/3/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Physics and Astronomy(all)

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