Terahertz properties from the surface of strained SiGe on Si multilayered structure

K. Omura, A. Nakamura, T. Kiwa, Y. Yamashita, K. Sakai, K. Tsukada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Large-scale integration (LSI) has been improved by scaling contraction. Strained Si has been proposed as a higher carrier mobility than usual. We have evaluated the strained SiGe wafer by LTEM, which is a method of analyzing to detect THz waves generated by fs laser irradiated into the sample.

Original languageEnglish
Title of host publication2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
DOIs
Publication statusPublished - Dec 1 2013
Event2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 - Mainz, Germany
Duration: Sep 1 2013Sep 6 2013

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Other

Other2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
CountryGermany
CityMainz
Period9/1/139/6/13

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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  • Cite this

    Omura, K., Nakamura, A., Kiwa, T., Yamashita, Y., Sakai, K., & Tsukada, K. (2013). Terahertz properties from the surface of strained SiGe on Si multilayered structure. In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 [6665819] (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). https://doi.org/10.1109/IRMMW-THz.2013.6665819