Terahertz emission properties from palladium/silicon interface

Toshihiko Kiwa, Keiji Tsukada, Masato Suzuki, Masayoshi Tonouchi, Sonoko Migitaka, Koichi Yokosawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Laser terahertz (THz) emission and detection system for investigating catalytic metal/semiconductor interface of the hydrogen sensors was proposed and developed. THz radiation from palladium/silicon structures was successfully obtained. The properties of THz radiation under hydrogen and nitrogen gas mixture were investigated. The peak amplitude of THz radiation was decreased by increasing the volume concentration of hydrogen gas. This change in the amplitude can be explained by change in the local field near the surface of silicon. This result indicates that the system is one of potential tool for non-destructive and non-contact measurement of the hydrogen sensors.

Original languageEnglish
Title of host publicationDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Pages263-266
Number of pages4
Volume1
DOIs
Publication statusPublished - 2005
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: Jun 5 2005Jun 9 2005

Other

Other13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
CountryKorea, Republic of
CitySeoul
Period6/5/056/9/05

Fingerprint

Palladium
Silicon
Hydrogen
Radiation
Sensors
Gas mixtures
Semiconductor materials
Nitrogen
Lasers
Metals
Gases

Keywords

  • Catalytic metal
  • Field effect transistor
  • Hydrogen sensor
  • Terahertz radiation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kiwa, T., Tsukada, K., Suzuki, M., Tonouchi, M., Migitaka, S., & Yokosawa, K. (2005). Terahertz emission properties from palladium/silicon interface. In Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05 (Vol. 1, pp. 263-266). [2C1.2] https://doi.org/10.1109/SENSOR.2005.1496407

Terahertz emission properties from palladium/silicon interface. / Kiwa, Toshihiko; Tsukada, Keiji; Suzuki, Masato; Tonouchi, Masayoshi; Migitaka, Sonoko; Yokosawa, Koichi.

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05. Vol. 1 2005. p. 263-266 2C1.2.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kiwa, T, Tsukada, K, Suzuki, M, Tonouchi, M, Migitaka, S & Yokosawa, K 2005, Terahertz emission properties from palladium/silicon interface. in Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05. vol. 1, 2C1.2, pp. 263-266, 13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05, Seoul, Korea, Republic of, 6/5/05. https://doi.org/10.1109/SENSOR.2005.1496407
Kiwa T, Tsukada K, Suzuki M, Tonouchi M, Migitaka S, Yokosawa K. Terahertz emission properties from palladium/silicon interface. In Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05. Vol. 1. 2005. p. 263-266. 2C1.2 https://doi.org/10.1109/SENSOR.2005.1496407
Kiwa, Toshihiko ; Tsukada, Keiji ; Suzuki, Masato ; Tonouchi, Masayoshi ; Migitaka, Sonoko ; Yokosawa, Koichi. / Terahertz emission properties from palladium/silicon interface. Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05. Vol. 1 2005. pp. 263-266
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