Temperature dependence of luminescence in ZnSe

Kenji Yoshino, Yasushi Matsushima, Shirley Tiong-Palisoc, Kenzo Ohmori, Makoto Hiramatsu

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Abstract

As-grown ZnSe and RbCl- and CsCl-doped ZnSe single crystals are grown by a sublimination method. The temperature dependence of the photoluminescence (PL) spectra in the blue emission region is measured from 4.2 K to 300 K. The emission band is observed in RbCl- and CsCl-doped ZnSe from 4.2 K to 300 K. In as-grown and Zn-annealed ZnSe, the emission band undergoes considerable attenuation at 100 K. However, the emission band is clearly observed in Se-annealed ZnSe up to near room temperature. These results prove that the disappearance of Se vacancies enhances room temperature PL.

Original languageEnglish
Pages (from-to)68-71
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume35
Issue number1-3
DOIs
Publication statusPublished - 1995

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Keywords

  • Optical properties
  • Photoluminescence
  • Semiconductors
  • Sublimation method
  • Vacancy
  • ZnSe

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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