Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex

Takayoshi Yokoya, Rikiya Yoshida, Yuki Utsumi, Koji Tsubota, Hiroyuki Okazaki, Takanori Wakita, Yoshikazu Mizuguchi, Yoshihiko Takano, Takayuki Muro, Yukako Kato, Hiroshi Kumigashira, Masaharu Oshima, Hisatomo Harima, Yoshihiro Aiura, Hitoshi Sato, Akihiro Ino, Hirofumi Namatame, Masaki Taniguchi, Masaaki Hirai, Yuji Muraoka

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Abstract

We have characterized the electronic structure of FeSe1-xTe x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E F): its splitting near EF and filling of the pseudogap in FeSe. IPES shows two features, near EF and approximately 6 eV above EF; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near EF for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.

Original languageEnglish
Article number054403
JournalScience and Technology of Advanced Materials
Volume13
Issue number5
DOIs
Publication statusPublished - Oct 2012

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Photoemission
Photoelectron spectroscopy
Electronic structure
X rays
Valence bands
Fermi level
Electrons

Keywords

  • electronic structure
  • FeSe()Te
  • high-resolution photoemission spectroscopy
  • inverse photoemission spectroscopy
  • soft x-ray photoemission spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex . / Yokoya, Takayoshi; Yoshida, Rikiya; Utsumi, Yuki; Tsubota, Koji; Okazaki, Hiroyuki; Wakita, Takanori; Mizuguchi, Yoshikazu; Takano, Yoshihiko; Muro, Takayuki; Kato, Yukako; Kumigashira, Hiroshi; Oshima, Masaharu; Harima, Hisatomo; Aiura, Yoshihiro; Sato, Hitoshi; Ino, Akihiro; Namatame, Hirofumi; Taniguchi, Masaki; Hirai, Masaaki; Muraoka, Yuji.

In: Science and Technology of Advanced Materials, Vol. 13, No. 5, 054403, 10.2012.

Research output: Contribution to journalArticle

Yokoya, T, Yoshida, R, Utsumi, Y, Tsubota, K, Okazaki, H, Wakita, T, Mizuguchi, Y, Takano, Y, Muro, T, Kato, Y, Kumigashira, H, Oshima, M, Harima, H, Aiura, Y, Sato, H, Ino, A, Namatame, H, Taniguchi, M, Hirai, M & Muraoka, Y 2012, 'Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex ', Science and Technology of Advanced Materials, vol. 13, no. 5, 054403. https://doi.org/10.1088/1468-6996/13/5/054403
Yokoya, Takayoshi ; Yoshida, Rikiya ; Utsumi, Yuki ; Tsubota, Koji ; Okazaki, Hiroyuki ; Wakita, Takanori ; Mizuguchi, Yoshikazu ; Takano, Yoshihiko ; Muro, Takayuki ; Kato, Yukako ; Kumigashira, Hiroshi ; Oshima, Masaharu ; Harima, Hisatomo ; Aiura, Yoshihiro ; Sato, Hitoshi ; Ino, Akihiro ; Namatame, Hirofumi ; Taniguchi, Masaki ; Hirai, Masaaki ; Muraoka, Yuji. / Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex In: Science and Technology of Advanced Materials. 2012 ; Vol. 13, No. 5.
@article{81e2518ae0834f64855254bad79934e5,
title = "Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex",
abstract = "We have characterized the electronic structure of FeSe1-xTe x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E F): its splitting near EF and filling of the pseudogap in FeSe. IPES shows two features, near EF and approximately 6 eV above EF; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near EF for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.",
keywords = "electronic structure, FeSe()Te, high-resolution photoemission spectroscopy, inverse photoemission spectroscopy, soft x-ray photoemission spectroscopy",
author = "Takayoshi Yokoya and Rikiya Yoshida and Yuki Utsumi and Koji Tsubota and Hiroyuki Okazaki and Takanori Wakita and Yoshikazu Mizuguchi and Yoshihiko Takano and Takayuki Muro and Yukako Kato and Hiroshi Kumigashira and Masaharu Oshima and Hisatomo Harima and Yoshihiro Aiura and Hitoshi Sato and Akihiro Ino and Hirofumi Namatame and Masaki Taniguchi and Masaaki Hirai and Yuji Muraoka",
year = "2012",
month = "10",
doi = "10.1088/1468-6996/13/5/054403",
language = "English",
volume = "13",
journal = "Science and Technology of Advanced Materials",
issn = "1468-6996",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Te concentration dependent photoemission and inverse-photoemission study of FeSe1-xTex

AU - Yokoya, Takayoshi

AU - Yoshida, Rikiya

AU - Utsumi, Yuki

AU - Tsubota, Koji

AU - Okazaki, Hiroyuki

AU - Wakita, Takanori

AU - Mizuguchi, Yoshikazu

AU - Takano, Yoshihiko

AU - Muro, Takayuki

AU - Kato, Yukako

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Harima, Hisatomo

AU - Aiura, Yoshihiro

AU - Sato, Hitoshi

AU - Ino, Akihiro

AU - Namatame, Hirofumi

AU - Taniguchi, Masaki

AU - Hirai, Masaaki

AU - Muraoka, Yuji

PY - 2012/10

Y1 - 2012/10

N2 - We have characterized the electronic structure of FeSe1-xTe x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E F): its splitting near EF and filling of the pseudogap in FeSe. IPES shows two features, near EF and approximately 6 eV above EF; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near EF for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.

AB - We have characterized the electronic structure of FeSe1-xTe x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E F): its splitting near EF and filling of the pseudogap in FeSe. IPES shows two features, near EF and approximately 6 eV above EF; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near EF for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.

KW - electronic structure

KW - FeSe()Te

KW - high-resolution photoemission spectroscopy

KW - inverse photoemission spectroscopy

KW - soft x-ray photoemission spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84873889753&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873889753&partnerID=8YFLogxK

U2 - 10.1088/1468-6996/13/5/054403

DO - 10.1088/1468-6996/13/5/054403

M3 - Article

AN - SCOPUS:84873889753

VL - 13

JO - Science and Technology of Advanced Materials

JF - Science and Technology of Advanced Materials

SN - 1468-6996

IS - 5

M1 - 054403

ER -