Synthesis and Transistor Application of Bis[1]benzothieno[6,7- d

6′,7′- d′]benzo[1,2- b:4,5- b′]dithiophenes

Shuhei Nishinaga, Hiroki Mori, Yasushi Nishihara

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Four bis[1]benzothieno[6,7-d:6′,7′-d′]benzo[1,2-b:4,5-b′]dithiophene (BBTBDT) derivatives bearing substituents on the molecular long axis were synthesized, and their transistor performance was evaluated. Among the obtained compounds, OFET devices based on the 2,9-diphenyl-substituted derivative (1d) on a β-PTS-modified Si/SiO2 substrate yielded the best morphological and crystalline structures, resulting in the highest hole mobility, as high as 0.16 cm2 V-1 s-1, and a low threshold voltage of -8 V. In the solid state, 1d formed a highly ordered and crystalline edge-on structure, which facilitated effective carrier transport. The detailed structure-property relationships were also disclosed by GIWAXS analysis, atomic force microscopy measurements, and theoretical calculations.

Original languageEnglish
Pages (from-to)5506-5515
Number of pages10
JournalJournal of Organic Chemistry
Volume83
Issue number10
DOIs
Publication statusPublished - May 18 2018

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Transistors
Bearings (structural)
Crystalline materials
Derivatives
Organic field effect transistors
Hole mobility
Carrier transport
Threshold voltage
Atomic force microscopy
Substrates
diphenyl

ASJC Scopus subject areas

  • Organic Chemistry

Cite this

Synthesis and Transistor Application of Bis[1]benzothieno[6,7- d : 6′,7′- d′]benzo[1,2- b:4,5- b′]dithiophenes. / Nishinaga, Shuhei; Mori, Hiroki; Nishihara, Yasushi.

In: Journal of Organic Chemistry, Vol. 83, No. 10, 18.05.2018, p. 5506-5515.

Research output: Contribution to journalArticle

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