Synthesis and Physicochemical Properties of Piceno[4,3-b: 9,10-b′]dithiophene Derivatives and Their Application in Organic Field-Effect Transistors

Keita Hyodo, Ryota Toyama, Hiroki Mori, Yasushi Nishihara

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Efficient synthesis and characterization of several piceno[4,3-b:9,10-b′]dithiophene (PiDT) derivatives by Negishi coupling, epoxidation, and Lewis acid-catalyzed cycloaromatization sequences and their potential utility in organic field-effect transistors (OFETs) have been reported. PiDT derivatives, with extended π-electron systems, showed high air stability due to their deep highest occupied molecular orbital energy levels (around -5.6 eV). OFET devices based on 2,11-dioctylated PiDT (C8-PiDT) showed excellent hole mobility, as high as 2.36 cm2 V-1 s-1. Their structure-property relationships were investigated by X-ray diffraction and atomic force microscopy.

Original languageEnglish
Pages (from-to)308-315
Number of pages8
JournalACS Omega
Volume2
Issue number1
DOIs
Publication statusPublished - Jan 31 2017

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)

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