Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5

B. A. Strukov, E. V. Milov, V. N. Milov, A. P. Korobtsov, T. Tomida, K. Sato, M. Fukunaga, Y. Uesu

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Abstract

The processes of polarization switching in LaBGeO5 (LBGO) crystals are studied in details for the triangle and pulse electric field in the wide temperature range from room temperature (RT) to Tc = 530°C. It is revealed that the temperature dependence of a coercive field (f = 0.1 Hz) has an exponential form and this field reaches a value 150 kV/cm at the RT. The temperature evolution of the switching time and the form of the switching current are obtained in the mode of the successive solitary pulses and in the steady conditions. The features of "non-classical" behavior are noted (the dependence of switching parameters on the prehistory of samples, frequency dependence of the switching time). It is shown that the stable artificial domain structure at RT with the periodicity of 200 μm can be obtained by applying about 300-350 V/mm near 300°C. The stable domain structure was contrasted by means of SHG microscope probing.

Original languageEnglish
Pages (from-to)105-113
Number of pages9
JournalFerroelectrics
Volume314
DOIs
Publication statusPublished - Jan 1 2005

Keywords

  • Coercive field
  • Domain structure
  • LaBGeO
  • Polarization switching
  • Quasi-phase matching device
  • SHG microscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Strukov, B. A., Milov, E. V., Milov, V. N., Korobtsov, A. P., Tomida, T., Sato, K., Fukunaga, M., & Uesu, Y. (2005). Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5 Ferroelectrics, 314, 105-113. https://doi.org/10.1080/00150190590926247