Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5

B. A. Strukov, E. V. Milov, V. N. Milov, A. P. Korobtsov, T. Tomida, K. Sato, M. Fukunaga, Y. Uesu

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

The processes of polarization switching in LaBGeO5 (LBGO) crystals are studied in details for the triangle and pulse electric field in the wide temperature range from room temperature (RT) to Tc = 530°C. It is revealed that the temperature dependence of a coercive field (f = 0.1 Hz) has an exponential form and this field reaches a value 150 kV/cm at the RT. The temperature evolution of the switching time and the form of the switching current are obtained in the mode of the successive solitary pulses and in the steady conditions. The features of "non-classical" behavior are noted (the dependence of switching parameters on the prehistory of samples, frequency dependence of the switching time). It is shown that the stable artificial domain structure at RT with the periodicity of 200 μm can be obtained by applying about 300-350 V/mm near 300°C. The stable domain structure was contrasted by means of SHG microscope probing.

Original languageEnglish
Title of host publicationFerroelectrics
Pages105-113
Number of pages9
Volume314
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Ferroelectric materials
room temperature
Temperature
pulses
triangles
periodic variations
microscopes
Microscopes
temperature dependence
Electric fields
temperature
electric fields
Polarization
polarization
Crystals
crystals

Keywords

  • Coercive field
  • Domain structure
  • LaBGeO
  • Polarization switching
  • Quasi-phase matching device
  • SHG microscope

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Strukov, B. A., Milov, E. V., Milov, V. N., Korobtsov, A. P., Tomida, T., Sato, K., ... Uesu, Y. (2005). Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5. In Ferroelectrics (Vol. 314, pp. 105-113) https://doi.org/10.1080/00150190590926247

Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5. / Strukov, B. A.; Milov, E. V.; Milov, V. N.; Korobtsov, A. P.; Tomida, T.; Sato, K.; Fukunaga, M.; Uesu, Y.

Ferroelectrics. Vol. 314 2005. p. 105-113.

Research output: Chapter in Book/Report/Conference proceedingChapter

Strukov, BA, Milov, EV, Milov, VN, Korobtsov, AP, Tomida, T, Sato, K, Fukunaga, M & Uesu, Y 2005, Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5. in Ferroelectrics. vol. 314, pp. 105-113. https://doi.org/10.1080/00150190590926247
Strukov BA, Milov EV, Milov VN, Korobtsov AP, Tomida T, Sato K et al. Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5. In Ferroelectrics. Vol. 314. 2005. p. 105-113 https://doi.org/10.1080/00150190590926247
Strukov, B. A. ; Milov, E. V. ; Milov, V. N. ; Korobtsov, A. P. ; Tomida, T. ; Sato, K. ; Fukunaga, M. ; Uesu, Y. / Switching processes and formation of the stable artificial domain structure in ferroelectric LaBGeO5. Ferroelectrics. Vol. 314 2005. pp. 105-113
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AU - Milov, V. N.

AU - Korobtsov, A. P.

AU - Tomida, T.

AU - Sato, K.

AU - Fukunaga, M.

AU - Uesu, Y.

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N2 - The processes of polarization switching in LaBGeO5 (LBGO) crystals are studied in details for the triangle and pulse electric field in the wide temperature range from room temperature (RT) to Tc = 530°C. It is revealed that the temperature dependence of a coercive field (f = 0.1 Hz) has an exponential form and this field reaches a value 150 kV/cm at the RT. The temperature evolution of the switching time and the form of the switching current are obtained in the mode of the successive solitary pulses and in the steady conditions. The features of "non-classical" behavior are noted (the dependence of switching parameters on the prehistory of samples, frequency dependence of the switching time). It is shown that the stable artificial domain structure at RT with the periodicity of 200 μm can be obtained by applying about 300-350 V/mm near 300°C. The stable domain structure was contrasted by means of SHG microscope probing.

AB - The processes of polarization switching in LaBGeO5 (LBGO) crystals are studied in details for the triangle and pulse electric field in the wide temperature range from room temperature (RT) to Tc = 530°C. It is revealed that the temperature dependence of a coercive field (f = 0.1 Hz) has an exponential form and this field reaches a value 150 kV/cm at the RT. The temperature evolution of the switching time and the form of the switching current are obtained in the mode of the successive solitary pulses and in the steady conditions. The features of "non-classical" behavior are noted (the dependence of switching parameters on the prehistory of samples, frequency dependence of the switching time). It is shown that the stable artificial domain structure at RT with the periodicity of 200 μm can be obtained by applying about 300-350 V/mm near 300°C. The stable domain structure was contrasted by means of SHG microscope probing.

KW - Coercive field

KW - Domain structure

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KW - Quasi-phase matching device

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