Surface Currents In Inp/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation

Hideki Fukano, Yoshifumi Takanashi, Masatomo Fujimoto

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

The correlation between the passivation film formation for InP/lnGaAs heterojunction bipolar transistors and transistor current-voltage (I-V) characteristics is investigated. The I-Vcharacteristics vary significantly depending on the kind of passivation films. The major change in I-V characteristics is the increase in base current (Ib), which implies the generation of an additional recombination process around the surface of the emitter-base junction. A change in collector current (Ic) is also observed, indicating that the electron injection mechanism changed near the passivated semiconductor surface. These surface currents are produced by the interaction of the semiconductor surface with the passivation films. It is shown that these surface currents are greatly suppressed using a buffered hydrofluoric acid solution before the passivation film formation.

Original languageEnglish
Pages (from-to)L1788-L1791
JournalJapanese Journal of Applied Physics
Volume32
Issue number12 B
DOIs
Publication statusPublished - Dec 1993
Externally publishedYes

Keywords

  • HBT
  • InGaAs
  • Inp
  • Passivation
  • Surface current

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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