Surface currents in InP/InGaAs heterojunction bipolar transistors produced by passivation film formation

Hideki Fukano, Yoshifumi Takanashi, Masatomo Fujimoto

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The correlation between the passivation film formation for InP/InGaAs heterojunction bipolar transistors and transistor current-voltage (I-V) characteristics is investigated. The I-V characteristics vary significantly depending on the kind of passivation films. The major change in I-V characteristics is the increase in base current (Ib), which implies the generation of an additional recombination process around the surface of the emitter-base junction. A change in collector current (Ic) is also observed, indicating that the electron injection mechanism changed near the passivated semiconductor surface. These surface currents are produced by the interaction of the semiconductor surface with the passivation films. It is shown that these surface currents are greatly suppressed using a buffered hydrofluoric acid solution before the passivation film formation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
Issue number12 B
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
Passivation
passivity
heterojunctions
Semiconductor materials
Hydrofluoric acid
Electron injection
hydrofluoric acid
Beam plasma interactions
accumulators
Transistors
emitters
transistors
injection
Electric potential
electric potential
electrons
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Surface currents in InP/InGaAs heterojunction bipolar transistors produced by passivation film formation. / Fukano, Hideki; Takanashi, Yoshifumi; Fujimoto, Masatomo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 32, No. 12 B, 1993.

Research output: Contribution to journalArticle

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