Supercritical resist dryer

Hideo Namatsu, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

A supercritical resist dryer (SRD) based on supercritical (SC) drying by controlling moisture is developed. It was effective to dry using SC CO 2 at a lower pressure just above the critical point, and adding a pumping system of SC CO 2 to the Teflon-coated chamber to reduce water contamination. The SRD yielded high-aspect-ratio resist patterns without any pattern collapse or deformation.

Original languageEnglish
Pages (from-to)780-784
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number2
DOIs
Publication statusPublished - Mar 2000
Externally publishedYes

Fingerprint

drying apparatus
Polytetrafluoroethylenes
Aspect ratio
Drying
Contamination
Moisture
teflon (trademark)
high aspect ratio
moisture
drying
Water
critical point
contamination
pumping
low pressure
chambers
water

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Supercritical resist dryer. / Namatsu, Hideo; Yamazaki, Kenji; Kurihara, Kenji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 2, 03.2000, p. 780-784.

Research output: Contribution to journalArticle

Namatsu, Hideo ; Yamazaki, Kenji ; Kurihara, Kenji. / Supercritical resist dryer. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 2. pp. 780-784.
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