A supercritical resist dryer (SRD) based on supercritical (SC) drying by controlling moisture is developed. It was effective to dry using SC CO 2 at a lower pressure just above the critical point, and adding a pumping system of SC CO 2 to the Teflon-coated chamber to reduce water contamination. The SRD yielded high-aspect-ratio resist patterns without any pattern collapse or deformation.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Mar 2000|
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