Supercritical drying for nanostructure fabrication without pattern collapse

Hideo Namatsu, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalConference article

93 Citations (Scopus)

Abstract

Supercritical drying has been proposed for the fabrication of nanostructures made up of silicon or resist. Pattern collapse, which is a very serious problem in the fabrication of fine patterns, is related to the spacing, the aspect ratio and the surface tension of rinse solution. Among them, surface-tension reduction is the most effective way to reduce pattern collapse, because it is independent of pattern size. Using supercritical carbon dioxide, which is completely free of surface tension, as a final rinse, we have obtained silicon patterns without collapse. For resist, we have found that avoidance of water contamination is the key factor in suppressing pattern deformation in supercritical drying. Consequently, a drying technique which results in resist patterns without pattern collapse and deformation has been proposed.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalMicroelectronic Engineering
Volume46
Issue number1
DOIs
Publication statusPublished - May 1999
EventProceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
Duration: Sep 22 1998Sep 24 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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