Supercritical drying for nanostructure fabrication without pattern collapse

Hideo Namatsu, Kenji Yamazaki, Kenji Kurihara

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

Supercritical drying has been proposed for the fabrication of nanostructures made up of silicon or resist. Pattern collapse, which is a very serious problem in the fabrication of fine patterns, is related to the spacing, the aspect ratio and the surface tension of rinse solution. Among them, surface-tension reduction is the most effective way to reduce pattern collapse, because it is independent of pattern size. Using supercritical carbon dioxide, which is completely free of surface tension, as a final rinse, we have obtained silicon patterns without collapse. For resist, we have found that avoidance of water contamination is the key factor in suppressing pattern deformation in supercritical drying. Consequently, a drying technique which results in resist patterns without pattern collapse and deformation has been proposed.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalMicroelectronic Engineering
Volume46
Issue number1
DOIs
Publication statusPublished - May 1999
Externally publishedYes

Fingerprint

nanofabrication
drying
Surface tension
Nanostructures
Drying
Silicon
Fabrication
Carbon Dioxide
interfacial tension
Aspect ratio
Carbon dioxide
Contamination
Water
fabrication
avoidance
silicon
carbon dioxide
aspect ratio
contamination
spacing

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Supercritical drying for nanostructure fabrication without pattern collapse. / Namatsu, Hideo; Yamazaki, Kenji; Kurihara, Kenji.

In: Microelectronic Engineering, Vol. 46, No. 1, 05.1999, p. 129-132.

Research output: Contribution to journalArticle

Namatsu, Hideo ; Yamazaki, Kenji ; Kurihara, Kenji. / Supercritical drying for nanostructure fabrication without pattern collapse. In: Microelectronic Engineering. 1999 ; Vol. 46, No. 1. pp. 129-132.
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