Superconductivity in boron-doped SiC

Zhi An Ren, Junya Kato, Takahiro Muranaka, Jun Akimitsu, Markus Kriener, Yoshiteru Maeno

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Abstract

We report superconductivity in heavily boron-doped bulk silicon carbide related to the diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility below a critical temperature T c of ∼1.4 K, and an effective boron doping concentration higher than 10 21 cm -3. We present the H-T phase diagram of this new superconducting compound determined from AC susceptibility. In finite DC magnetic fields a clear hysteresis was observed between cooling and subsequent warming runs. This indicates, in contrast with the type-II superconductivity in boron-doped diamond and silicon, that a type-I superconductivity with a critical field H c(0) of about 100 Oe is realized in boron-doped SiC. Moreover, the specific-heat shows a clear jump at T c, demonstrating bulk nature of the superconductivity.

Original languageEnglish
Article number103710
Journaljournal of the physical society of japan
Volume76
Issue number10
DOIs
Publication statusPublished - Oct 2007

Keywords

  • Heavily boron-doped
  • SiC
  • Superconductivity
  • Wide-gap semiconductor

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Ren, Z. A., Kato, J., Muranaka, T., Akimitsu, J., Kriener, M., & Maeno, Y. (2007). Superconductivity in boron-doped SiC. journal of the physical society of japan, 76(10), [103710]. https://doi.org/10.1143/JPSJ.76.103710