57Fe diffusion in n-type Si after GeV implantation of 57Mn

Y. Yoshida, Y. Kobayashi, K. Yukihira, K. Hayakawa, K. Suzuki, A. Yoshida, H. Ueno, A. Yoshimi, K. Shimada, D. Nagae, K. Asahi, G. Langouche

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10 Citations (Scopus)

Abstract

At the RI-beam facility of the RIKEN, 57Mn/57Fe isotopes are separated and implanted into n-type FZ-Si (6×1016 As/cm3), and subsequently the atomic jump processes of 57Fe in the Si matrix are observed by Mössbauer spectroscopy on a time scale of 100 ns between 330 and 1200 K. The spectra consist of two components due to "interstitial Fe" and "substitutional Fe", both of which yield the same isomer shifts as those reported in p-type Si, showing long-range diffusion with increasing temperature. The spectra are compared with those simulated from a theoretical model.

Original languageEnglish
Pages (from-to)101-104
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - Dec 15 2007

Keywords

  • Fast diffusion
  • Iron impurity
  • Mössbauer spectroscopy
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Yoshida, Y., Kobayashi, Y., Yukihira, K., Hayakawa, K., Suzuki, K., Yoshida, A., Ueno, H., Yoshimi, A., Shimada, K., Nagae, D., Asahi, K., & Langouche, G. (2007). 57Fe diffusion in n-type Si after GeV implantation of 57Mn. Physica B: Condensed Matter, 401-402, 101-104. https://doi.org/10.1016/j.physb.2007.08.122