Abstract
Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al2O3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.
Original language | English |
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Pages (from-to) | 458-466 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3997 |
Publication status | Published - Jan 1 2000 |
Event | Emerging Lithographic Technologies IV - Santa Clara, CA, USA Duration: Feb 28 2000 → Mar 1 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering