Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy

Kenji Yamazaki, Mohammad S.M. Saifullah, Hideo Namatsu, Kenji Kurihara

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al2O3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.

Original languageEnglish
Pages (from-to)458-466
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3997
Publication statusPublished - Jan 1 2000
EventEmerging Lithographic Technologies IV - Santa Clara, CA, USA
Duration: Feb 28 2000Mar 1 2000

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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