Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy

Kenji Yamazaki, Mohammad S M Saifullah, Hideo Namatsu, Kenji Kurihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages458-466
Number of pages9
Volume3997
Publication statusPublished - 2000
Externally publishedYes
EventEmerging Lithographic Technologies IV - Santa Clara, CA, USA
Duration: Feb 28 2000Mar 1 2000

Other

OtherEmerging Lithographic Technologies IV
CitySanta Clara, CA, USA
Period2/28/003/1/00

Fingerprint

Electron beam lithography
lithography
electron beams
Electron devices
Nanolithography
Lithography
high acceleration
Electron beams
Etching
Lenses
micrometers
Electric potential
Substrates
lenses
etching
high resolution
electric potential
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yamazaki, K., Saifullah, M. S. M., Namatsu, H., & Kurihara, K. (2000). Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3997, pp. 458-466). Society of Photo-Optical Instrumentation Engineers.

Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy. / Yamazaki, Kenji; Saifullah, Mohammad S M; Namatsu, Hideo; Kurihara, Kenji.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3997 Society of Photo-Optical Instrumentation Engineers, 2000. p. 458-466.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamazaki, K, Saifullah, MSM, Namatsu, H & Kurihara, K 2000, Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3997, Society of Photo-Optical Instrumentation Engineers, pp. 458-466, Emerging Lithographic Technologies IV, Santa Clara, CA, USA, 2/28/00.
Yamazaki K, Saifullah MSM, Namatsu H, Kurihara K. Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3997. Society of Photo-Optical Instrumentation Engineers. 2000. p. 458-466
Yamazaki, Kenji ; Saifullah, Mohammad S M ; Namatsu, Hideo ; Kurihara, Kenji. / Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3997 Society of Photo-Optical Instrumentation Engineers, 2000. pp. 458-466
@inproceedings{e66388323eee417c9966a556d5683041,
title = "Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy",
abstract = "Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.",
author = "Kenji Yamazaki and Saifullah, {Mohammad S M} and Hideo Namatsu and Kenji Kurihara",
year = "2000",
language = "English",
volume = "3997",
pages = "458--466",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - GEN

T1 - Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy

AU - Yamazaki, Kenji

AU - Saifullah, Mohammad S M

AU - Namatsu, Hideo

AU - Kurihara, Kenji

PY - 2000

Y1 - 2000

N2 - Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.

AB - Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.

UR - http://www.scopus.com/inward/record.url?scp=0033681608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033681608&partnerID=8YFLogxK

M3 - Conference contribution

VL - 3997

SP - 458

EP - 466

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -