Abstract
Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 458-466 |
| Number of pages | 9 |
| Volume | 3997 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | Emerging Lithographic Technologies IV - Santa Clara, CA, USA Duration: Feb 28 2000 → Mar 1 2000 |
Other
| Other | Emerging Lithographic Technologies IV |
|---|---|
| City | Santa Clara, CA, USA |
| Period | 2/28/00 → 3/1/00 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy. / Yamazaki, Kenji; Saifullah, Mohammad S M; Namatsu, Hideo; Kurihara, Kenji.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3997 Society of Photo-Optical Instrumentation Engineers, 2000. p. 458-466.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Sub-10-nm electron beam lithography with sub-10-nm overlay accuracy
AU - Yamazaki, Kenji
AU - Saifullah, Mohammad S M
AU - Namatsu, Hideo
AU - Kurihara, Kenji
PY - 2000
Y1 - 2000
N2 - Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.
AB - Stable sub-10-nm lithography was achieved using a 100-kV electron-beam naonolithography system. 8-nm-wide lines were formed using a high resolution spin-coatable Al 2O 3 resist, and even at the corner of a wide field of several-hundred micrometers square, the lines were about 10-nm wide. The overlay accuracies in |mean|+2σ were about 5 nm at the field center and sub-10 nm at the field boundaries. The high stability of exposure and the high overlay accuracy were obtained not only by the high-performance lens and the high acceleration voltage but by high stability of the stage and the beam. A method of repeating nanolithography with high overlay accuracy and substrate etching was developed. It allows us to form sub-10-nm-wide standing lines within the field, using a highly sensitive positive-tone resist. These technologies are promising to apply to high performance nanodevices like integrated single-electron devices.
UR - http://www.scopus.com/inward/record.url?scp=0033681608&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033681608&partnerID=8YFLogxK
M3 - Conference contribution
VL - 3997
SP - 458
EP - 466
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
ER -