TY - JOUR
T1 - Study on thin SiC layer split by hydrogen implantation in SiC
AU - Hosono, T.
AU - Hanamoto, K.
AU - Uéno, T.
AU - Kitabatake, I.
AU - Sasaki, M.
AU - Nakayama, Y.
AU - Nishino, S.
N1 - Funding Information:
The authors are grateful to Prof. Y. Kido of Ritsumeikan University for helpful assistance. This work was supported in part by The Science Research Promotion Fund from Japan Private School Promotion Foundation.
PY - 1999/1/3
Y1 - 1999/1/3
N2 - A thin SiC layer split by H2 implantation with an energy of 160 keV in SiC wafer has been studied by a new method of optical reflectance interference spectrometry (ORIS). The ORIS spectra revealed that thin SiC layer caused by microsplits is formed over almost whole region of the samples and the thickness of the thin SiC layer is about 630 nm for this implantation. The thickness split has been discussed in connection with the results of atomic force microscopy (AFM) and Rutherford backscattering spectrometry/channeling (RBS/C). The RBS/C measurements also indicated that the surface lattice defects of SiC due to H-implantation decreased by heat treatments.
AB - A thin SiC layer split by H2 implantation with an energy of 160 keV in SiC wafer has been studied by a new method of optical reflectance interference spectrometry (ORIS). The ORIS spectra revealed that thin SiC layer caused by microsplits is formed over almost whole region of the samples and the thickness of the thin SiC layer is about 630 nm for this implantation. The thickness split has been discussed in connection with the results of atomic force microscopy (AFM) and Rutherford backscattering spectrometry/channeling (RBS/C). The RBS/C measurements also indicated that the surface lattice defects of SiC due to H-implantation decreased by heat treatments.
KW - 61.72.Ww
KW - 81.20.-n
KW - Atomic force microscopy
KW - Hydrogen ion implantation
KW - Optical reflectance interference spectrometry
KW - Rutherford backscattering spectrometry/channeling
KW - SiC
KW - Thin layer
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U2 - 10.1016/S0168-583X(98)00623-5
DO - 10.1016/S0168-583X(98)00623-5
M3 - Article
AN - SCOPUS:0033518347
SN - 0168-583X
VL - 149
SP - 67
EP - 71
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-2
ER -