Study on thin SiC layer split by hydrogen implantation in SiC

T. Hosono, Katsumi Hanamoto, T. Uéno, I. Kitabatake, M. Sasaki, Y. Nakayama, S. Nishino

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3 Citations (Scopus)


A thin SiC layer split by H2 implantation with an energy of 160 keV in SiC wafer has been studied by a new method of optical reflectance interference spectrometry (ORIS). The ORIS spectra revealed that thin SiC layer caused by microsplits is formed over almost whole region of the samples and the thickness of the thin SiC layer is about 630 nm for this implantation. The thickness split has been discussed in connection with the results of atomic force microscopy (AFM) and Rutherford backscattering spectrometry/channeling (RBS/C). The RBS/C measurements also indicated that the surface lattice defects of SiC due to H-implantation decreased by heat treatments.

Original languageEnglish
Pages (from-to)67-71
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2
Publication statusPublished - Jan 3 1999
Externally publishedYes



  • 61.72.Ww
  • 81.20.-n
  • Atomic force microscopy
  • Hydrogen ion implantation
  • Optical reflectance interference spectrometry
  • Rutherford backscattering spectrometry/channeling
  • SiC
  • Thin layer

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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