Abstract
We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application of 〈100〉 and 〈111〉 stresses split the DLTS peak of the defect into two components with intensity ratios of 2.3:1 and 1.1:1, respectively, which were ratios of short- to long-time components. Under 〈110〉 stress, the peak split into three components with an intensity ratio of 0.8:3.7:1. Comparing this splitting pattern to the piezospectroscopic theory of Kaplyanskii, we have uniquely determined that the defect has the orthorhombic symmetry with the C2v point group, and have identified the defect as the Pt-H2 complex previously identified by Uftring et al. [Phys. Rev. B 51 (1995) 9612]. We also observed that the defect was reoriented above 80 K along the applied uniaxial stress. Such reorientation occurred only when the defect level was not occupied by an electron. Our observation strongly suggests that the local motion of hydrogen around the Pt atom is remarkably affected by the charge state of the defect.
| Original language | English |
|---|---|
| Pages (from-to) | 352-357 |
| Number of pages | 6 |
| Journal | Microelectronic Engineering |
| Volume | 66 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Apr 2003 |
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Keywords
- DLTS
- Platinum-hydrogen complex
- Silicon
- Stress-induced splitting
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
Cite this
Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress. / Kamiura, Y.; Iwagami, Y.; Fukuda, K.; Yamashita, Yoshifumi; Ishiyama, T.; Tokuda, Y.
In: Microelectronic Engineering, Vol. 66, No. 1-4, 04.2003, p. 352-357.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress
AU - Kamiura, Y.
AU - Iwagami, Y.
AU - Fukuda, K.
AU - Yamashita, Yoshifumi
AU - Ishiyama, T.
AU - Tokuda, Y.
PY - 2003/4
Y1 - 2003/4
N2 - We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application of 〈100〉 and 〈111〉 stresses split the DLTS peak of the defect into two components with intensity ratios of 2.3:1 and 1.1:1, respectively, which were ratios of short- to long-time components. Under 〈110〉 stress, the peak split into three components with an intensity ratio of 0.8:3.7:1. Comparing this splitting pattern to the piezospectroscopic theory of Kaplyanskii, we have uniquely determined that the defect has the orthorhombic symmetry with the C2v point group, and have identified the defect as the Pt-H2 complex previously identified by Uftring et al. [Phys. Rev. B 51 (1995) 9612]. We also observed that the defect was reoriented above 80 K along the applied uniaxial stress. Such reorientation occurred only when the defect level was not occupied by an electron. Our observation strongly suggests that the local motion of hydrogen around the Pt atom is remarkably affected by the charge state of the defect.
AB - We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application of 〈100〉 and 〈111〉 stresses split the DLTS peak of the defect into two components with intensity ratios of 2.3:1 and 1.1:1, respectively, which were ratios of short- to long-time components. Under 〈110〉 stress, the peak split into three components with an intensity ratio of 0.8:3.7:1. Comparing this splitting pattern to the piezospectroscopic theory of Kaplyanskii, we have uniquely determined that the defect has the orthorhombic symmetry with the C2v point group, and have identified the defect as the Pt-H2 complex previously identified by Uftring et al. [Phys. Rev. B 51 (1995) 9612]. We also observed that the defect was reoriented above 80 K along the applied uniaxial stress. Such reorientation occurred only when the defect level was not occupied by an electron. Our observation strongly suggests that the local motion of hydrogen around the Pt atom is remarkably affected by the charge state of the defect.
KW - DLTS
KW - Platinum-hydrogen complex
KW - Silicon
KW - Stress-induced splitting
UR - http://www.scopus.com/inward/record.url?scp=0037395093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037395093&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(02)00941-3
DO - 10.1016/S0167-9317(02)00941-3
M3 - Article
AN - SCOPUS:0037395093
VL - 66
SP - 352
EP - 357
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1-4
ER -