Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

Y. Kamiura, Y. Iwagami, K. Fukuda, Y. Yamashita, T. Ishiyama, Y. Tokuda

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application of 〈100〉 and 〈111〉 stresses split the DLTS peak of the defect into two components with intensity ratios of 2.3:1 and 1.1:1, respectively, which were ratios of short- to long-time components. Under 〈110〉 stress, the peak split into three components with an intensity ratio of 0.8:3.7:1. Comparing this splitting pattern to the piezospectroscopic theory of Kaplyanskii, we have uniquely determined that the defect has the orthorhombic symmetry with the C2v point group, and have identified the defect as the Pt-H2 complex previously identified by Uftring et al. [Phys. Rev. B 51 (1995) 9612]. We also observed that the defect was reoriented above 80 K along the applied uniaxial stress. Such reorientation occurred only when the defect level was not occupied by an electron. Our observation strongly suggests that the local motion of hydrogen around the Pt atom is remarkably affected by the charge state of the defect.

Original languageEnglish
Pages (from-to)352-357
Number of pages6
JournalMicroelectronic Engineering
Volume66
Issue number1-4
DOIs
Publication statusPublished - Apr 1 2003
EventIUMRS-ICEM 2002 - Xi an, China
Duration: Jun 10 2002Jun 14 2002

Keywords

  • DLTS
  • Platinum-hydrogen complex
  • Silicon
  • Stress-induced splitting

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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