Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

Y. Kamiura, Y. Iwagami, K. Fukuda, Yoshifumi Yamashita, T. Ishiyama, Y. Tokuda

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum- and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application of 〈100〉 and 〈111〉 stresses split the DLTS peak of the defect into two components with intensity ratios of 2.3:1 and 1.1:1, respectively, which were ratios of short- to long-time components. Under 〈110〉 stress, the peak split into three components with an intensity ratio of 0.8:3.7:1. Comparing this splitting pattern to the piezospectroscopic theory of Kaplyanskii, we have uniquely determined that the defect has the orthorhombic symmetry with the C2v point group, and have identified the defect as the Pt-H2 complex previously identified by Uftring et al. [Phys. Rev. B 51 (1995) 9612]. We also observed that the defect was reoriented above 80 K along the applied uniaxial stress. Such reorientation occurred only when the defect level was not occupied by an electron. Our observation strongly suggests that the local motion of hydrogen around the Pt atom is remarkably affected by the charge state of the defect.

Original languageEnglish
Pages (from-to)352-357
Number of pages6
JournalMicroelectronic Engineering
Volume66
Issue number1-4
DOIs
Publication statusPublished - Apr 2003

Fingerprint

Deep level transient spectroscopy
Platinum
platinum
capacitance
Defects
defects
spectroscopy
Hydrogen
Point groups
Crystal symmetry
hydrogen
Conduction bands
Compressive stress
retraining
conduction bands
Atoms
Electrons
symmetry
atoms

Keywords

  • DLTS
  • Platinum-hydrogen complex
  • Silicon
  • Stress-induced splitting

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Study of the deep level related to a platinum-dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress. / Kamiura, Y.; Iwagami, Y.; Fukuda, K.; Yamashita, Yoshifumi; Ishiyama, T.; Tokuda, Y.

In: Microelectronic Engineering, Vol. 66, No. 1-4, 04.2003, p. 352-357.

Research output: Contribution to journalArticle

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