Study of electronic structures for Fe thin films deposited on Si- and C-faces of 4H-SiC substrates by soft X-ray emission spectroscopy

M. Hirai, T. Wakita, H. Okazaki, D. Koishihara, Y. Muraoka, T. Yokoya

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system are fundamentally important from the viewpoint of device performance. We study interface electronic structure of iron thin film deposited on silicon (Si)- and carbon (C)-face of 4H-SiC(0 0 0 1) by using a soft X-ray emission spectroscopy (SXES). For specimens of Fe (50 nm)/4H-SiC (substrate) contact systems annealed at 700 and 900 °C, the Si L 2,3 emission spectra indicate different shapes and peak energies from the substrate depending on thermal-treated temperature. The product of materials such as silicides is suggested. Further, from comparison of Si L 2,3 emission spectra between Si- and C-face for the same annealing temperature at 700 °C, it is concluded that the similar silicides and/or ternary materials are formed on the two surfaces. However for those of 900 °C, the film on substrate is composed of the different silicide and/or ternary materials.

Original languageEnglish
Pages (from-to)26-28
Number of pages3
JournalApplied Surface Science
Volume254
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - Oct 31 2007

Keywords

  • 4H-SiC
  • C-face
  • Fe
  • SXES
  • Si-face
  • Silicide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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