Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy

M. Hirai, H. Okazaki, R. Yoshida, M. Tajima, K. Saeki, Y. Muraoka, T. Yokoya

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance. We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L 2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.

Original languageEnglish
Pages (from-to)948-949
Number of pages2
JournalApplied Surface Science
Volume256
Issue number4
DOIs
Publication statusPublished - Nov 30 2009

Keywords

  • 6H-SiC
  • SXES
  • Silicide
  • Vanadium

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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