Abstract
Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance. We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.
| Original language | English |
|---|---|
| Pages (from-to) | 948-949 |
| Number of pages | 2 |
| Journal | Applied Surface Science |
| Volume | 256 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Nov 30 2009 |
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Keywords
- 6H-SiC
- Silicide
- SXES
- Vanadium
ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy. / Hirai, M.; Okazaki, H.; Yoshida, R.; Tajima, M.; Saeki, K.; Muraoka, Yuji; Yokoya, Takayoshi.
In: Applied Surface Science, Vol. 256, No. 4, 30.11.2009, p. 948-949.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy
AU - Hirai, M.
AU - Okazaki, H.
AU - Yoshida, R.
AU - Tajima, M.
AU - Saeki, K.
AU - Muraoka, Yuji
AU - Yokoya, Takayoshi
PY - 2009/11/30
Y1 - 2009/11/30
N2 - Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance. We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.
AB - Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance. We study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0 0 0 1) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 °C, the Si L2,3 emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.
KW - 6H-SiC
KW - Silicide
KW - SXES
KW - Vanadium
UR - http://www.scopus.com/inward/record.url?scp=70749143563&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70749143563&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2009.05.120
DO - 10.1016/j.apsusc.2009.05.120
M3 - Article
AN - SCOPUS:70749143563
VL - 256
SP - 948
EP - 949
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 4
ER -