Structures and local electronic states of dislocation loop jn 4H-SiC via a linear-scaling tight-binding study

Engineering & Materials Science

• Electronic density of states 100%
• Electronic states 82%
• Stacking faults 73%
• Energy gap 58%
• Molecular dynamics 58%
• Atoms 53%
• Electrons 52%
• Crystals 51%
• Defects 35%
• Computer simulation 28%
• Experiments 18%

Chemical Compounds

• Dislocation Loop 94%
• Tight-Binding Method 38%
• Electronic State 38%
• Stacking Fault 35%
• Simulation 32%
• Density of State 27%
• Band Gap 19%
• Molecular Dynamics 19%
• Electron Particle 14%

Physics & Astronomy

• scaling 36%
• electronics 26%
• parallel computers 24%
• electronic levels 22%
• crystal defects 17%
• simulation 13%
• molecular dynamics 12%
• rings 11%
• defects 9%
• configurations 9%
• atoms 8%
• crystals 8%
• electrons 7%