Structure and stress-induced alignment of a hydrogen-carbon complex in silicon

Yoichi Kamiura, Nobuaki Ishiga, Yoshifumi Yamashita

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of 〈111〉 and 〈110〉 compressive stresses split the DLTS peak into two as ratios of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the 〈100〉 stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a 〈110〉 stress of 1 GPa.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number11 PART A
Publication statusPublished - Nov 1 1997

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alignment
Silicon
Hydrogen
Deep level transient spectroscopy
Carbon
carbon
silicon
hydrogen
Electronic states
Compressive stress
spectroscopy
Temperature
symmetry
electronics

Keywords

  • Carbon
  • Defect
  • DLTS
  • Hydrogen
  • Si
  • Stress-induced alignment

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Structure and stress-induced alignment of a hydrogen-carbon complex in silicon. / Kamiura, Yoichi; Ishiga, Nobuaki; Yamashita, Yoshifumi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 11 PART A, 01.11.1997.

Research output: Contribution to journalArticle

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