Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films

R. Eguchi; Y. Okamoto; Z. Hiroi; S. Shin; A. Chainani; Y. Tanaka; M. Matsunami; Y. Takata; Y. Nishino; K. Tamasaku; M. Yabashi; T. Ishikawa

doi:10.1063/1.3086666

Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films

R. Eguchi, Y. Okamoto, Z. Hiroi, S. Shin, A. Chainani, Y. Tanaka, M. Matsunami, Y. Takata, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.

Original language	English
Article number	056103
Journal	Journal of Applied Physics
Volume	105
Issue number	5
DOIs	https://doi.org/10.1063/1.3086666
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3086666

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title = "Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films",

abstract = "We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.",

author = "R. Eguchi and Y. Okamoto and Z. Hiroi and S. Shin and A. Chainani and Y. Tanaka and M. Matsunami and Y. Takata and Y. Nishino and K. Tamasaku and M. Yabashi and T. Ishikawa",

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doi = "10.1063/1.3086666",

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journal = "Journal of Applied Physics",

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T1 - Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films

AU - Eguchi, R.

AU - Okamoto, Y.

AU - Hiroi, Z.

AU - Shin, S.

AU - Chainani, A.

AU - Tanaka, Y.

AU - Matsunami, M.

AU - Takata, Y.

AU - Nishino, Y.

AU - Tamasaku, K.

AU - Yabashi, M.

AU - Ishikawa, T.

PY - 2009

Y1 - 2009

N2 - We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.

AB - We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.

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Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films

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