Abstract
We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.
| Original language | English |
|---|---|
| Article number | 056103 |
| Journal | Journal of Applied Physics |
| Volume | 105 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films. / Eguchi, Ritsuko; Okamoto, Y.; Hiroi, Z.; Shin, S.; Chainani, A.; Tanaka, Y.; Matsunami, M.; Takata, Y.; Nishino, Y.; Tamasaku, K.; Yabashi, M.; Ishikawa, T.
In: Journal of Applied Physics, Vol. 105, No. 5, 056103, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films
AU - Eguchi, Ritsuko
AU - Okamoto, Y.
AU - Hiroi, Z.
AU - Shin, S.
AU - Chainani, A.
AU - Tanaka, Y.
AU - Matsunami, M.
AU - Takata, Y.
AU - Nishino, Y.
AU - Tamasaku, K.
AU - Yabashi, M.
AU - Ishikawa, T.
PY - 2009
Y1 - 2009
N2 - We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.
AB - We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.
UR - http://www.scopus.com/inward/record.url?scp=62549091034&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=62549091034&partnerID=8YFLogxK
U2 - 10.1063/1.3086666
DO - 10.1063/1.3086666
M3 - Article
AN - SCOPUS:62549091034
VL - 105
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
M1 - 056103
ER -