Abstract
We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.
Original language | English |
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Article number | 056103 |
Journal | Journal of Applied Physics |
Volume | 105 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)