Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films

R. Eguchi, Y. Okamoto, Z. Hiroi, S. Shin, A. Chainani, Y. Tanaka, M. Matsunami, Y. Takata, Y. Nishino, K. Tamasaku, M. Yabashi, T. Ishikawa

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Abstract

We study epitaxial NdNiO3 thin films on NdGaO3 (001) single-crystal substrates grown using a pulsed-laser deposition method. The films show a clear first-order metal-insulator transition (MIT) at TMI ∼240 K, which is significantly higher than TMI ∼190 K in bulk NdNiO3. The x-ray reciprocal space map shows in-plane tensile and out-of-plane compressive strain, stabilizing the more distorted NdNiO3 thin films with the higher transition temperature. Hard x-ray photoemission shows changes across the MIT and the bandwidth-controlled charge-transfer gap opens due to the reduced p-d hybridization in the low-temperature insulating phase.

Original languageEnglish
Article number056103
JournalJournal of Applied Physics
Volume105
Issue number5
DOIs
Publication statusPublished - Mar 24 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Eguchi, R., Okamoto, Y., Hiroi, Z., Shin, S., Chainani, A., Tanaka, Y., Matsunami, M., Takata, Y., Nishino, Y., Tamasaku, K., Yabashi, M., & Ishikawa, T. (2009). Structure and photoemission spectroscopy of strain-controlled metal-insulator transition in NdNiO3 thin films. Journal of Applied Physics, 105(5), [056103]. https://doi.org/10.1063/1.3086666