Rare-earth iron oxides (RFe2O4) have attracting attention as new electronic device materials because of their numerous functionalities, such as electronic ferroelectricity, ferrimagnetism, and high infrared absorption. In this paper, nearly monophasic Y bFe2O4 films were prepared on α-Al2O3(001) substrates by the spin coating method using an aqueous-based Y bFe2O4 solution. The solution was composed of a stoichiometric ratio of Y b(CH3COO)3 and Fe(NO3)3 with excess chelating agents. After heat treatment above 800 °C, well-crystallized and highly (001)-oriented Y bFe2O4 started to epitaxially form on the substrate under controlled oxygen partial pressure with H2/CO2 gas mixtures. X-ray pole figure analysis confirmed the following epitaxial relationship: Y bFe2O4(001)//α-Al2O3(001). Moreover formation of an Fe3O4 interracial layer between Y bFe2O4 and α-Al2O3 was detected by high-resolution transmission electron microscopy. Presence of the Fe3O4 interracial layer seemed to release the lattice misfit with the substrate. The Fe2+/Fe3+ ratio in the obtained Y bFe2O4 films was nearly stoichiometric and the indirect bandgap assigned to Fe2+ → Fe3+ charge transfer excitation was found to be ∼0.4 eV by optical spectroscopy. A clear magnetic transition from the paramagnetic state to the ferrimagnetic state occurred at ∼230 K.
ASJC Scopus subject areas
- Physics and Astronomy(all)