Stress measurement of carbon cluster implanted layers with in-plane diffraction technique

Jiro Matsuo, Kazuya Ichiki, Masaki Hada, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Tsutomu Nagayama, Masayasu Tanjyo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing.

Original languageEnglish
Title of host publicationExtended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009
Pages84-85
Number of pages2
DOIs
Publication statusPublished - Dec 1 2009
Event9th International Workshop on Junction Technology, IWJT 2009 - Kyoto, Japan
Duration: Jun 11 2009Jun 12 2009

Publication series

NameExtended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009

Other

Other9th International Workshop on Junction Technology, IWJT 2009
CountryJapan
CityKyoto
Period6/11/096/12/09

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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