Stress measurement of carbon cluster implanted layers with in-plane diffraction technique

Jiro Matsuo, Kazuya Ichiki, Masaki Hada, Satoshi Ninomiya, Toshio Seki, Takaaki Aoki, Tsutomu Nagayama, Masayasu Tanjyo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing.

Original languageEnglish
Title of host publicationExtended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009
Pages84-85
Number of pages2
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event9th International Workshop on Junction Technology, IWJT 2009 - Kyoto, Japan
Duration: Jun 11 2009Jun 12 2009

Other

Other9th International Workshop on Junction Technology, IWJT 2009
CountryJapan
CityKyoto
Period6/11/096/12/09

Fingerprint

Carbon clusters
Stress measurement
Diffraction
Ion implantation
Annealing
X ray diffraction
Ions
Electric lamps
Monomers
Semiconductor materials
Atoms
Carbon

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Matsuo, J., Ichiki, K., Hada, M., Ninomiya, S., Seki, T., Aoki, T., ... Tanjyo, M. (2009). Stress measurement of carbon cluster implanted layers with in-plane diffraction technique. In Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009 (pp. 84-85). [5166225] https://doi.org/10.1109/IWJT.2009.5166225

Stress measurement of carbon cluster implanted layers with in-plane diffraction technique. / Matsuo, Jiro; Ichiki, Kazuya; Hada, Masaki; Ninomiya, Satoshi; Seki, Toshio; Aoki, Takaaki; Nagayama, Tsutomu; Tanjyo, Masayasu.

Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009. 2009. p. 84-85 5166225.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsuo, J, Ichiki, K, Hada, M, Ninomiya, S, Seki, T, Aoki, T, Nagayama, T & Tanjyo, M 2009, Stress measurement of carbon cluster implanted layers with in-plane diffraction technique. in Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009., 5166225, pp. 84-85, 9th International Workshop on Junction Technology, IWJT 2009, Kyoto, Japan, 6/11/09. https://doi.org/10.1109/IWJT.2009.5166225
Matsuo J, Ichiki K, Hada M, Ninomiya S, Seki T, Aoki T et al. Stress measurement of carbon cluster implanted layers with in-plane diffraction technique. In Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009. 2009. p. 84-85. 5166225 https://doi.org/10.1109/IWJT.2009.5166225
Matsuo, Jiro ; Ichiki, Kazuya ; Hada, Masaki ; Ninomiya, Satoshi ; Seki, Toshio ; Aoki, Takaaki ; Nagayama, Tsutomu ; Tanjyo, Masayasu. / Stress measurement of carbon cluster implanted layers with in-plane diffraction technique. Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009. 2009. pp. 84-85
@inproceedings{1ddfab4b049e47498a664bd4d2c6d1bd,
title = "Stress measurement of carbon cluster implanted layers with in-plane diffraction technique",
abstract = "Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50{\%} of the stress parallel to the surface even after flash lamp annealing.",
author = "Jiro Matsuo and Kazuya Ichiki and Masaki Hada and Satoshi Ninomiya and Toshio Seki and Takaaki Aoki and Tsutomu Nagayama and Masayasu Tanjyo",
year = "2009",
doi = "10.1109/IWJT.2009.5166225",
language = "English",
isbn = "9781424439447",
pages = "84--85",
booktitle = "Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009",

}

TY - GEN

T1 - Stress measurement of carbon cluster implanted layers with in-plane diffraction technique

AU - Matsuo, Jiro

AU - Ichiki, Kazuya

AU - Hada, Masaki

AU - Ninomiya, Satoshi

AU - Seki, Toshio

AU - Aoki, Takaaki

AU - Nagayama, Tsutomu

AU - Tanjyo, Masayasu

PY - 2009

Y1 - 2009

N2 - Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing.

AB - Cluster ion implantation has a great potential for semiconductor manufacturing, such as ultra shallow junction formation and strain engineering of channel. Stress in Si implanted with carbon cluster ions (C7H 7) was much higher than that in Si implanted with carbon monomer ions. Multiple collisions of atoms occurred during cluster ion implantation, and a fully amorphized Si layer can be formed. The stress in the implanted layer strongly depends on the annealing condition. There are two different directions for the stress. One is parallel to the surface, which is usually measured with conventional X-ray diffraction. The other is perpendicular to the surface, which can be measured with in-plane X-ray diffraction technique. The stress perpendicular to the surface was about 50% of the stress parallel to the surface even after flash lamp annealing.

UR - http://www.scopus.com/inward/record.url?scp=77950149354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950149354&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2009.5166225

DO - 10.1109/IWJT.2009.5166225

M3 - Conference contribution

AN - SCOPUS:77950149354

SN - 9781424439447

SP - 84

EP - 85

BT - Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009

ER -