Stress-induced level shift of a hydrogen-carbon complex in silicon

Kazuhisa Fukuda, Yoichi Kamiura, Yoshifumi Yamashita, Takeshi Ishiyama

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have studied the stress-induced shift of a deep level at Ec - 0.15 eV due to a hydrogen-carbon complex in Si using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. Linear stress dependencies of the ionization energy of the above level were observed for five components of split DLTS peaks altogether for , and stresses. By subtracting the stress shifts of conduction band minima from the stress dependencies of ionization energy, the net stress shifts of the energy level were obtained. Two piezospectroscopic parameters, A1 and A2, were determined as approximately 4 and -9.5 meV/GPa, respectively. Considering a molecular-orbital schematic suggested here and throughout, we conclude that the stress-induced level shifts and the splits pattern of DLTS peaks reflect the trigonal symmetry and antibonding character of the electronic state of the complex. These properties are completely consistent with the atomic configuration in which a hydrogen atom occupies the bond-centered site between Si and C atoms.

Original languageEnglish
Pages (from-to)6700-6704
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12
Publication statusPublished - Dec 2001

Fingerprint

Silicon
Hydrogen
Carbon
carbon
shift
silicon
hydrogen
Deep level transient spectroscopy
Ionization potential
Atoms
spectroscopy
ionization
Schematic diagrams
Electronic states
Molecular orbitals
Conduction bands
Compressive stress
circuit diagrams
Electron energy levels
hydrogen atoms

Keywords

  • Carbon
  • DLTS
  • Hydrogen
  • Silicon
  • Uniaxial stress

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Stress-induced level shift of a hydrogen-carbon complex in silicon. / Fukuda, Kazuhisa; Kamiura, Yoichi; Yamashita, Yoshifumi; Ishiyama, Takeshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 12, 12.2001, p. 6700-6704.

Research output: Contribution to journalArticle

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N2 - We have studied the stress-induced shift of a deep level at Ec - 0.15 eV due to a hydrogen-carbon complex in Si using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. Linear stress dependencies of the ionization energy of the above level were observed for five components of split DLTS peaks altogether for , and stresses. By subtracting the stress shifts of conduction band minima from the stress dependencies of ionization energy, the net stress shifts of the energy level were obtained. Two piezospectroscopic parameters, A1 and A2, were determined as approximately 4 and -9.5 meV/GPa, respectively. Considering a molecular-orbital schematic suggested here and throughout, we conclude that the stress-induced level shifts and the splits pattern of DLTS peaks reflect the trigonal symmetry and antibonding character of the electronic state of the complex. These properties are completely consistent with the atomic configuration in which a hydrogen atom occupies the bond-centered site between Si and C atoms.

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