We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.
- Hidden electronic-order
- Inhomogeneous electronic state
- Pb-doped Bi2201
- Scanning tunneling microscopy
ASJC Scopus subject areas
- Condensed Matter Physics