STM studies on the electronic state of the overdoped Bi2201

Kazutaka Kudo; Terukazu Nishizaki; Naoyuki Okumura; Norio Kobayashi

doi:10.1016/j.physc.2007.03.320

STM studies on the electronic state of the overdoped Bi2201

Kazutaka Kudo, Terukazu Nishizaki, Naoyuki Okumura, Norio Kobayashi

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

We have performed STM measurements for the overdoped Bi_1.79Pb_0.37Sr_1.86CuO_6+δ with T_c = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.

Original language	English
Pages (from-to)	948-949
Number of pages	2
Journal	Physica C: Superconductivity and its Applications
Volume	460-462 II
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physc.2007.03.320
Publication status	Published - Sep 1 2007
Externally published	Yes

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Keywords

Hidden electronic-order
Inhomogeneous electronic state
Overdoping
Pb-doped Bi2201
Scanning tunneling microscopy

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Kudo, K., Nishizaki, T., Okumura, N., & Kobayashi, N. (2007). STM studies on the electronic state of the overdoped Bi2201. Physica C: Superconductivity and its Applications, 460-462 II(SPEC. ISS.), 948-949. https://doi.org/10.1016/j.physc.2007.03.320

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abstract = "We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.",

keywords = "Hidden electronic-order, Inhomogeneous electronic state, Overdoping, Pb-doped Bi2201, Scanning tunneling microscopy",

author = "Kazutaka Kudo and Terukazu Nishizaki and Naoyuki Okumura and Norio Kobayashi",

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Access to Document

10.1016/j.physc.2007.03.320