STM studies on the electronic state of the overdoped Bi2201

Kazutaka Kudo; Terukazu Nishizaki; Naoyuki Okumura; Norio Kobayashi

doi:10.1016/j.physc.2007.03.320

STM studies on the electronic state of the overdoped Bi2201

Kazutaka Kudo, Terukazu Nishizaki, Naoyuki Okumura, Norio Kobayashi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have performed STM measurements for the overdoped Bi_1.79Pb_0.37Sr_1.86CuO_6+δ with T_c = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.

Original language	English
Pages (from-to)	948-949
Number of pages	2
Journal	Physica C: Superconductivity and its applications
Volume	460-462 II
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physc.2007.03.320
Publication status	Published - Sep 1 2007
Externally published	Yes

Keywords

Hidden electronic-order
Inhomogeneous electronic state
Overdoping
Pb-doped Bi2201
Scanning tunneling microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/j.physc.2007.03.320

Cite this

@article{786e950631fb4678a9172bcfcec98b1f,

title = "STM studies on the electronic state of the overdoped Bi2201",

abstract = "We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.",

keywords = "Hidden electronic-order, Inhomogeneous electronic state, Overdoping, Pb-doped Bi2201, Scanning tunneling microscopy",

author = "Kazutaka Kudo and Terukazu Nishizaki and Naoyuki Okumura and Norio Kobayashi",

note = "Funding Information: We thank Y. Murakami for EPMA at the Advanced Research Center of Metallic Glasses, IMR, Tohoku University. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas (No. 451) from the Ministry of Education, Culture, Sports, Science and Technology, Japan. ",

year = "2007",

month = sep,

day = "1",

doi = "10.1016/j.physc.2007.03.320",

language = "English",

volume = "460-462 II",

pages = "948--949",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - STM studies on the electronic state of the overdoped Bi2201

AU - Kudo, Kazutaka

AU - Nishizaki, Terukazu

AU - Okumura, Naoyuki

AU - Kobayashi, Norio

N1 - Funding Information: We thank Y. Murakami for EPMA at the Advanced Research Center of Metallic Glasses, IMR, Tohoku University. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas (No. 451) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2007/9/1

Y1 - 2007/9/1

N2 - We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.

AB - We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.

KW - Hidden electronic-order

KW - Inhomogeneous electronic state

KW - Overdoping

KW - Pb-doped Bi2201

KW - Scanning tunneling microscopy

UR - http://www.scopus.com/inward/record.url?scp=34548271072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548271072&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2007.03.320

DO - 10.1016/j.physc.2007.03.320

M3 - Article

AN - SCOPUS:34548271072

VL - 460-462 II

SP - 948

EP - 949

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - SPEC. ISS.

ER -

STM studies on the electronic state of the overdoped Bi2201

Abstract

Keywords

ASJC Scopus subject areas

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