Abstract
We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.
Original language | English |
---|---|
Pages (from-to) | 948-949 |
Number of pages | 2 |
Journal | Physica C: Superconductivity and its applications |
Volume | 460-462 II |
Issue number | SPEC. ISS. |
DOIs | |
Publication status | Published - Sep 1 2007 |
Externally published | Yes |
Keywords
- Hidden electronic-order
- Inhomogeneous electronic state
- Overdoping
- Pb-doped Bi2201
- Scanning tunneling microscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering