Abstract
We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.
| Original language | English |
|---|---|
| Pages (from-to) | 948-949 |
| Number of pages | 2 |
| Journal | Physica C: Superconductivity and its Applications |
| Volume | 460-462 II |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - Sep 1 2007 |
| Externally published | Yes |
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Keywords
- Hidden electronic-order
- Inhomogeneous electronic state
- Overdoping
- Pb-doped Bi2201
- Scanning tunneling microscopy
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
STM studies on the electronic state of the overdoped Bi2201. / Kudo, Kazutaka; Nishizaki, Terukazu; Okumura, Naoyuki; Kobayashi, Norio.
In: Physica C: Superconductivity and its Applications, Vol. 460-462 II, No. SPEC. ISS., 01.09.2007, p. 948-949.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - STM studies on the electronic state of the overdoped Bi2201
AU - Kudo, Kazutaka
AU - Nishizaki, Terukazu
AU - Okumura, Naoyuki
AU - Kobayashi, Norio
PY - 2007/9/1
Y1 - 2007/9/1
N2 - We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.
AB - We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.
KW - Hidden electronic-order
KW - Inhomogeneous electronic state
KW - Overdoping
KW - Pb-doped Bi2201
KW - Scanning tunneling microscopy
UR - http://www.scopus.com/inward/record.url?scp=34548271072&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34548271072&partnerID=8YFLogxK
U2 - 10.1016/j.physc.2007.03.320
DO - 10.1016/j.physc.2007.03.320
M3 - Article
AN - SCOPUS:34548271072
VL - 460-462 II
SP - 948
EP - 949
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - SPEC. ISS.
ER -