STM studies on the electronic state of the overdoped Bi2201

Kazutaka Kudo, Terukazu Nishizaki, Naoyuki Okumura, Norio Kobayashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have performed STM measurements for the overdoped Bi1.79Pb0.37Sr1.86CuO6+δ with Tc = 7 K. Under high bias-voltages above 300 mV, STM images show a clear two-dimensional atomic-arrangement, which consists of Bi and Pb atoms on the Bi(Pb)-O plane. On the other hand, those under low bias-voltages below 150 mV depict bright patches of ∼1-3 nm diameter. Patches become marked with decreasing bias-voltage, and finally cover almost entirely the plane at the bias-voltage of 50 mV. It has been revealed that the observed patch structure corresponds to the hidden electronic-order including some disturbance due to the overdoped holes.

Original languageEnglish
Pages (from-to)948-949
Number of pages2
JournalPhysica C: Superconductivity and its Applications
Volume460-462 II
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Sep 1 2007
Externally publishedYes

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Keywords

  • Hidden electronic-order
  • Inhomogeneous electronic state
  • Overdoping
  • Pb-doped Bi2201
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

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