Stishovite single-crystal growth and application to silicon self-diffusion measurements

Anton Shatskiy, Daisuke Yamazaki, Yuriy M. Borzdov, Takuya Matsuzaki, Konstantin D. Litasov, Titus Cooray, Anais Ferot, I. T O Eiji, Katsura Tomoo

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Large single crystals of stishovite were successfully synthesized at 11 GPa from a silica solution in water. The potential of both slow cooling and thermal gradient methods were examined. The thermal gradient method provided crystals of 0.8 × 0.8 × 1.3 mm in size grown at 1350 °C and a thermal gradient of 50 °C/mm using stishovite as a silica source. The use of quartz: as a source resulted in the appearance of numerous stishovite crystals in the solution interior resulting in diminished space for the growth of large crystals. This can be explained by a significant difference in the solubility of metastable quartz and stishovite in water, estimated to be 85.3 and 5.6 wt% SiO2 at 1000 °C and 11 GPa, respectively. Crystals up to 0.8 × 1.3 × 1.5 mm were grown by the slow cooling method in the system SiO2 + 14.7 wt% H2O as temperature was decreased from 1600 to 1000 °C with a cooling rate of 2 °C/min. The size of single crystals obtained was large enough to carry out silicon self-diffusion experiments, which were performed at a pressure of 14 GPa and temperatures from. 1400 to 1800 °C. The lattice diffusion coefficients along the [110] and [001] directions can be expressed as D[110] (m2/s) = 4.10 × 10 -12 exp [-322 (kJ/mol)/RT] and D[001] (mVs) = 5.62 × 1.0-12 exp [-334 (kJ/mol)/RT], respectively, where R is the gas constant and T is the absolute temperature.

Original languageEnglish
Pages (from-to)135-143
Number of pages9
JournalAmerican Mineralogist
Volume95
Issue number1
DOIs
Publication statusPublished - Jan 2010
Externally publishedYes

Fingerprint

stishovite
Silicon
Crystallization
silicon
crystal growth
Single crystals
Thermal gradients
crystal
Crystals
Quartz
Gradient methods
single crystals
Cooling
cooling
Silicon Dioxide
gradients
crystals
quartz
silicon dioxide
Water

Keywords

  • Aqueous fluid
  • Diffusion
  • High pressure
  • Silica solubility
  • Single-crystal growth
  • Stishovite

ASJC Scopus subject areas

  • Geochemistry and Petrology
  • Geophysics

Cite this

Shatskiy, A., Yamazaki, D., Borzdov, Y. M., Matsuzaki, T., Litasov, K. D., Cooray, T., ... Tomoo, K. (2010). Stishovite single-crystal growth and application to silicon self-diffusion measurements. American Mineralogist, 95(1), 135-143. https://doi.org/10.2138/am.2010.3255

Stishovite single-crystal growth and application to silicon self-diffusion measurements. / Shatskiy, Anton; Yamazaki, Daisuke; Borzdov, Yuriy M.; Matsuzaki, Takuya; Litasov, Konstantin D.; Cooray, Titus; Ferot, Anais; Eiji, I. T O; Tomoo, Katsura.

In: American Mineralogist, Vol. 95, No. 1, 01.2010, p. 135-143.

Research output: Contribution to journalArticle

Shatskiy, A, Yamazaki, D, Borzdov, YM, Matsuzaki, T, Litasov, KD, Cooray, T, Ferot, A, Eiji, ITO & Tomoo, K 2010, 'Stishovite single-crystal growth and application to silicon self-diffusion measurements', American Mineralogist, vol. 95, no. 1, pp. 135-143. https://doi.org/10.2138/am.2010.3255
Shatskiy, Anton ; Yamazaki, Daisuke ; Borzdov, Yuriy M. ; Matsuzaki, Takuya ; Litasov, Konstantin D. ; Cooray, Titus ; Ferot, Anais ; Eiji, I. T O ; Tomoo, Katsura. / Stishovite single-crystal growth and application to silicon self-diffusion measurements. In: American Mineralogist. 2010 ; Vol. 95, No. 1. pp. 135-143.
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