Stability and defect reaction of two hydrogen-carbon complexes in silicon

Y. Kamiura, M. Tsutsue, M. Hayashi, Yoshifumi Yamashita, F. Hashimoto

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

We have found by DLTS technique an electron trap E3(0.15) and a hole trap H1(0.33), both of which are related to hydrogen and carbon, in hydrogenated n-type and p-type Si crystals. The E3 trap was annihilated above 40°C with an activation energy of about 0.7 eV and a pre-exponential factor of approx. 107 s-1, while the H1 trap was stable up to 100°C above which it disappeared with an activation energy of about 1.7 eV and a pre-exponential factor of approx. 1019 s-1. The annihilation of the E3 trap was slowed down under a reverse bias applied to the Schottky junction. This feature and the small pre-exponential factor suggest that the E3 trap becomes unstable by capturing an electron from the conduction band. On the other hand, the large pre-exponential factor of the H1 trap suggests that its dissociation involves a large entropy change for the atomic motion of hydrogen. It is suggested that E3 and H1 traps arise from two different defects with similar origins and structures.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages903-908
Number of pages6
Volume196-201
Editionpt 2
Publication statusPublished - 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: Jul 23 1995Jul 28 1995

Other

OtherProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
CitySendai, Jpn
Period7/23/957/28/95

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kamiura, Y., Tsutsue, M., Hayashi, M., Yamashita, Y., & Hashimoto, F. (1995). Stability and defect reaction of two hydrogen-carbon complexes in silicon. In Materials Science Forum (pt 2 ed., Vol. 196-201, pp. 903-908). Trans Tech Publ.