Sputtering yield as a function of incident ion energy and angle in wurtzite-type GaN crystal

Kenji Harafuji, Katsuyuki Kawamura

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A molecular dynamics simulation has been performed for the physical sputtering of a wurtzite-type GaN(0001) surface by an energetic Ar ion. Potential parameters and unit cell parameters are determined on the basis of the periodic restricted Hartree-Fock ab initio method. A sputtering of crystal atoms takes place within about 100 fs after the impact of an incident ion due to a linear collision-cascade mechanism. After approximately 200 fs, the kinetic energy is distributed among many atoms in the crystal creating a hot spot in the impact region of the ion. Nitrogen atoms are mostly sputtered. Ga atoms are always sputtered with N atoms in pairs. The threshold energy is 100eV for N sputtering for perpendicular incidence. The sputtering yield increases as the ion incidence becomes more inclined for the angle range of 60 to 90°.

Original languageEnglish
Pages (from-to)1536-1540
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number3 PART 1
DOIs
Publication statusPublished - Mar 14 2008

Keywords

  • GaN
  • Interatomic potential
  • Molecular dynamics
  • Simulation
  • Sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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