Sputtering yield as a function of incident ion energy and angle in wurtzite-type GaN crystal

Kenji Harafuji, Katsuyuki Kawamura

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A molecular dynamics simulation has been performed for the physical sputtering of a wurtzite-type GaN(0001) surface by an energetic Ar ion. Potential parameters and unit cell parameters are determined on the basis of the periodic restricted Hartree-Fock ab initio method. A sputtering of crystal atoms takes place within about 100 fs after the impact of an incident ion due to a linear collision-cascade mechanism. After approximately 200 fs, the kinetic energy is distributed among many atoms in the crystal creating a hot spot in the impact region of the ion. Nitrogen atoms are mostly sputtered. Ga atoms are always sputtered with N atoms in pairs. The threshold energy is 100eV for N sputtering for perpendicular incidence. The sputtering yield increases as the ion incidence becomes more inclined for the angle range of 60 to 90°.

Original languageEnglish
Pages (from-to)1536-1540
Number of pages5
JournalJapanese Journal of Applied Physics
Volume47
Issue number3 PART 1
DOIs
Publication statusPublished - Mar 14 2008
Externally publishedYes

Fingerprint

wurtzite
Sputtering
sputtering
Atoms
Crystals
Ions
crystals
atoms
ions
incidence
energy
nitrogen atoms
cascades
Kinetic energy
kinetic energy
Molecular dynamics
molecular dynamics
collisions
thresholds
Nitrogen

Keywords

  • GaN
  • Interatomic potential
  • Molecular dynamics
  • Simulation
  • Sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Sputtering yield as a function of incident ion energy and angle in wurtzite-type GaN crystal. / Harafuji, Kenji; Kawamura, Katsuyuki.

In: Japanese Journal of Applied Physics, Vol. 47, No. 3 PART 1, 14.03.2008, p. 1536-1540.

Research output: Contribution to journalArticle

Harafuji, Kenji ; Kawamura, Katsuyuki. / Sputtering yield as a function of incident ion energy and angle in wurtzite-type GaN crystal. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 3 PART 1. pp. 1536-1540.
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