Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2

Hidefumi Takahashi, Tomoki Akiba, Alex Hiro Mayo, Kazuto Akiba, Atsushi Miyake, Masashi Tokunaga, Hitoshi Mori, Ryotaro Arita, Shintaro Ishiwata

Research output: Contribution to journalArticlepeer-review

Abstract

Two-dimensional magnetic materials have recently attracted great interest due to their unique functions as the electric field control of a magnetic phase and the anomalous spin Hall effect. For such remarkable functions, a spin-orbit coupling (SOC) serves as an essential ingredient. Here we report a giant positive magnetoresistance in a layered magnetic semiconductor AgCrSe2, which is a manifestation of the subtle combination of the SOC and Zeeman-type spin splitting. When the carrier concentration, n, approaches the critical value of 2.5×1018cm-3, a sizable positive magnetoresistance of ∼400% emerges upon the application of magnetic fields normal to the conducting layers. Based on the magneto-Seebeck effect and the first-principles calculations, the unconventional magnetoresistance is ascribable to the enhancement of effective carrier mass in the SOC-induced J=3/2 state, which is tuned to the Fermi level through the Zeeman splitting enhanced by the p-d coupling. This study demonstrates an aspect of the SOC-derived magnetotransport in two-dimensional magnetic semiconductors, paving the way to spintronic functions.

Original languageEnglish
Article number054602
JournalPhysical Review Materials
Volume6
Issue number5
DOIs
Publication statusPublished - May 2022
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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