Spin Hall effect in a curved graphene with spin-orbit interaction

T. Kato, S. Onari, J. Inoue

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of a curvature in a graphene with a spin-orbit interaction (SOI) is studied using a realistic π and σ orbital tight-binding (TB) model. The coupling of the atomic SOI and the curvature-induced orbital mixing produces an effective Rashba-type SOI and causes the k-dependent energy splitting in the low-energy electronic structure near the K point. We find that the spin Hall effect (SHE) is enhanced by the curvature effect. An effective π orbital model, which includes the SOI and curvature effects perturbatively, is also discussed.

Original languageEnglish
Pages (from-to)729-731
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume42
Issue number4
DOIs
Publication statusPublished - Feb 2010
Externally publishedYes

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Spin Hall effect
Graphite
spin-orbit interactions
Graphene
Hall effect
graphene
Orbits
curvature
orbitals
Electronic structure
electronic structure
energy
causes

Keywords

  • Graphene
  • Spin Hall effect
  • Spin-orbit interaction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Spin Hall effect in a curved graphene with spin-orbit interaction. / Kato, T.; Onari, S.; Inoue, J.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 42, No. 4, 02.2010, p. 729-731.

Research output: Contribution to journalArticle

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AB - The effect of a curvature in a graphene with a spin-orbit interaction (SOI) is studied using a realistic π and σ orbital tight-binding (TB) model. The coupling of the atomic SOI and the curvature-induced orbital mixing produces an effective Rashba-type SOI and causes the k-dependent energy splitting in the low-energy electronic structure near the K point. We find that the spin Hall effect (SHE) is enhanced by the curvature effect. An effective π orbital model, which includes the SOI and curvature effects perturbatively, is also discussed.

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