Spin-coatable Al2O3 resists in electron beam nanolithography

M. S.M. Saifullah, H. Namatsu, T. Yamaguchi, K. Yamazaki, K. Kurihara

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

Inorganic resists such as amorphous alumina are projected as potential candidates for high resolution electron beam nanolithography, with drawbacks on low sensitivity and tedious deposition process such as sputtering. Therefore, a spin-coatable Al2O3 resist with higher sensitivity is strongly desirable to overcome these drawbacks. The electron beam exposure characteristics of spin-coatable Al2O3 gel films prepared by aluminum tri-secbutoxide, Al(OBus)3, with chelating agents like ethylacetoacetate (EAcAc) are investigated.

Original languageEnglish
Pages (from-to)633-642
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3678
Issue numberI
DOIs
Publication statusPublished - Jan 1 1999
EventProceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI - Santa Clara, CA, USA
Duration: Mar 15 1999Mar 17 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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