Specific heat of aluminium-doped superconducting silicon carbide

M. Kriener, T. Muranaka, Y. Kikuchi, J. Akimitsu, Y. Maeno

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

Original languageEnglish
Article number012096
JournalJournal of Physics: Conference Series
Volume200
Issue numberSECTION 1
DOIs
Publication statusPublished - Jan 1 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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