Specific heat of aluminium-doped superconducting silicon carbide

M. Kriener, T. Muranaka, Y. Kikuchi, Jun Akimitsu, Y. Maeno

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

Original languageEnglish
Article number012096
JournalJournal of Physics: Conference Series
Volume200
Issue numberSECTION 1
DOIs
Publication statusPublished - 2010
Externally publishedYes

Fingerprint

silicon carbides
specific heat
aluminum
superconductivity
anomalies
charge carriers
boron
diamonds
transition temperature
ground state
silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Specific heat of aluminium-doped superconducting silicon carbide. / Kriener, M.; Muranaka, T.; Kikuchi, Y.; Akimitsu, Jun; Maeno, Y.

In: Journal of Physics: Conference Series, Vol. 200, No. SECTION 1, 012096, 2010.

Research output: Contribution to journalArticle

Kriener, M. ; Muranaka, T. ; Kikuchi, Y. ; Akimitsu, Jun ; Maeno, Y. / Specific heat of aluminium-doped superconducting silicon carbide. In: Journal of Physics: Conference Series. 2010 ; Vol. 200, No. SECTION 1.
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