Specific heat and electronic states of superconducting boron-doped silicon carbide

M. Kriener, Y. Maeno, T. Oguchi, Z. A. Ren, J. Kato, T. Muranaka, Jun Akimitsu

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related "mixed" system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type II. In this paper, we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to nonsuperconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two "parent" materials C:B and Si:B.

Original languageEnglish
Article number024517
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number2
DOIs
Publication statusPublished - Jul 24 2008
Externally publishedYes

Fingerprint

Boron
Electronic states
Superconductivity
Silicon carbide
silicon carbides
Specific heat
boron
superconductivity
specific heat
carbides
Carbides
electronics
Semiconductor materials
Diamond
Fermi surface
Silicon
Band structure
Superconducting materials
Fermi surfaces
Diamonds

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Specific heat and electronic states of superconducting boron-doped silicon carbide. / Kriener, M.; Maeno, Y.; Oguchi, T.; Ren, Z. A.; Kato, J.; Muranaka, T.; Akimitsu, Jun.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 78, No. 2, 024517, 24.07.2008.

Research output: Contribution to journalArticle

Kriener, M. ; Maeno, Y. ; Oguchi, T. ; Ren, Z. A. ; Kato, J. ; Muranaka, T. ; Akimitsu, Jun. / Specific heat and electronic states of superconducting boron-doped silicon carbide. In: Physical Review B - Condensed Matter and Materials Physics. 2008 ; Vol. 78, No. 2.
@article{536e719eb31942b093f72b9dd511c911,
title = "Specific heat and electronic states of superconducting boron-doped silicon carbide",
abstract = "The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related {"}mixed{"} system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type II. In this paper, we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to nonsuperconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two {"}parent{"} materials C:B and Si:B.",
author = "M. Kriener and Y. Maeno and T. Oguchi and Ren, {Z. A.} and J. Kato and T. Muranaka and Jun Akimitsu",
year = "2008",
month = "7",
day = "24",
doi = "10.1103/PhysRevB.78.024517",
language = "English",
volume = "78",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "2",

}

TY - JOUR

T1 - Specific heat and electronic states of superconducting boron-doped silicon carbide

AU - Kriener, M.

AU - Maeno, Y.

AU - Oguchi, T.

AU - Ren, Z. A.

AU - Kato, J.

AU - Muranaka, T.

AU - Akimitsu, Jun

PY - 2008/7/24

Y1 - 2008/7/24

N2 - The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related "mixed" system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type II. In this paper, we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to nonsuperconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two "parent" materials C:B and Si:B.

AB - The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related "mixed" system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type II. In this paper, we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to nonsuperconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two "parent" materials C:B and Si:B.

UR - http://www.scopus.com/inward/record.url?scp=48449105168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48449105168&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.78.024517

DO - 10.1103/PhysRevB.78.024517

M3 - Article

AN - SCOPUS:48449105168

VL - 78

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 2

M1 - 024517

ER -