Specific heat and effect of pressure on the electrical resistivity of CePtGa single crystal

Yoshiya Uwatoko, Masashi Kosaka, Makoto Shirakawa, Gendo Oomi, Nobuo Môri, Tatsuo Kobayashi, Hiroshi Tatewaki, Katsuya Shimizu, Kiichi Amaya

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Specific heat and effect of pressure on the electrical resistivity of CePtGa single crystal have been measured upto 30 kbar. A sharp peak in the ratio of specific heat to temperature and in electrical resistivity is observed at 3.3 and 3.5 K, respectively, which is ascribed to an antiferromagnetic transition. The results reveal that TN decreases linearly with increasing pressure upto 30 kbar.

Original languageEnglish
Pages (from-to)1321-1322
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - Jan 1 2000
Externally publishedYes

Keywords

  • Antiferromagnetic ordering
  • Effect of pressure
  • Electrical resistivity
  • Specific heat

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Specific heat and effect of pressure on the electrical resistivity of CePtGa single crystal'. Together they form a unique fingerprint.

  • Cite this

    Uwatoko, Y., Kosaka, M., Shirakawa, M., Oomi, G., Môri, N., Kobayashi, T., Tatewaki, H., Shimizu, K., & Amaya, K. (2000). Specific heat and effect of pressure on the electrical resistivity of CePtGa single crystal. Physica B: Condensed Matter, 284-288(PART II), 1321-1322. https://doi.org/10.1016/S0921-4526(99)02593-4