Abstract
• We have started R&D for the SOI detector with OKI Elec. Ind. Co. • 2.5 × 2.5 mm2 TEG chips have been fabricated - transistor, circuit, strip and pixel • transistor TEG chip was irradiated by the proton beam up to 8 × 1014 p/cm2 - threshold shifts of -0.1∼-0.2V - leakage current of NMOS increases by 30∼100μA depending on gate length. - the back gate bias reduces the threshold voltage shift. • New submission on Dec., 2006.
Original language | English |
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Publication status | Published - 2006 |
Externally published | Yes |
Event | Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community - Honolulu, HI, United States Duration: Oct 30 2006 → Nov 3 2006 |
Other
Other | Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community |
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Country/Territory | United States |
City | Honolulu, HI |
Period | 10/30/06 → 11/3/06 |
ASJC Scopus subject areas
- Condensed Matter Physics