SOI technology and study on its dose effect

Hirokazu Ishino, Y. Arai, Y. Ikegami, Y. Ushiroda, Y. Unno, O. Tajima, T. Tsuboyama, S. Terada, M. Hazumi, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, H. Miyake, G. Varner, E. Martin, H. Tajima, M. Ohno, K. Fukuda, H. HayashiH. Komatsubara, J. Ida

Research output: Contribution to conferencePaper

Abstract

• We have started R&D for the SOI detector with OKI Elec. Ind. Co. • 2.5 × 2.5 mm2 TEG chips have been fabricated - transistor, circuit, strip and pixel • transistor TEG chip was irradiated by the proton beam up to 8 × 1014 p/cm2 - threshold shifts of -0.1∼-0.2V - leakage current of NMOS increases by 30∼100μA depending on gate length. - the back gate bias reduces the threshold voltage shift. • New submission on Dec., 2006.

Original languageEnglish
Publication statusPublished - 2006
Externally publishedYes
EventAnnual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community - Honolulu, HI, United States
Duration: Oct 30 2006Nov 3 2006

Other

OtherAnnual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community
CountryUnited States
CityHonolulu, HI
Period10/30/0611/3/06

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Ishino, H., Arai, Y., Ikegami, Y., Ushiroda, Y., Unno, Y., Tajima, O., Tsuboyama, T., Terada, S., Hazumi, M., Ikeda, H., Hara, K., Ishino, H., Kawasaki, T., Miyake, H., Varner, G., Martin, E., Tajima, H., Ohno, M., Fukuda, K., ... Ida, J. (2006). SOI technology and study on its dose effect. Paper presented at Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community, Honolulu, HI, United States.