SOI technology and study on its dose effect

Hirokazu Ishino; Y. Arai; Y. Ikegami; Y. Ushiroda; Y. Unno; O. Tajima; T. Tsuboyama; S. Terada; M. Hazumi; H. Ikeda; K. Hara; H. Ishino; T. Kawasaki; H. Miyake; G. Varner; E. Martin; H. Tajima; M. Ohno; K. Fukuda; H. Hayashi; H. Komatsubara; J. Ida

SOI technology and study on its dose effect

Hirokazu Ishino, Y. Arai, Y. Ikegami, Y. Ushiroda, Y. Unno, O. Tajima, T. Tsuboyama, S. Terada, M. Hazumi, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, H. Miyake, G. Varner, E. Martin, H. Tajima, M. Ohno, K. Fukuda, H. HayashiH. Komatsubara, J. Ida

Research output: Contribution to conference › Paper › peer-review

Abstract

• We have started R&D for the SOI detector with OKI Elec. Ind. Co. • 2.5 × 2.5 mm² TEG chips have been fabricated - transistor, circuit, strip and pixel • transistor TEG chip was irradiated by the proton beam up to 8 × 10¹⁴ p/cm² - threshold shifts of -0.1∼-0.2V - leakage current of NMOS increases by 30∼100μA depending on gate length. - the back gate bias reduces the threshold voltage shift. • New submission on Dec., 2006.

Original language	English
Publication status	Published - 2006
Externally published	Yes
Event	Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community - Honolulu, HI, United States Duration: Oct 30 2006 → Nov 3 2006

Other

Other	Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community
Country/Territory	United States
City	Honolulu, HI
Period	10/30/06 → 11/3/06

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Ishino, H., Arai, Y., Ikegami, Y., Ushiroda, Y., Unno, Y., Tajima, O., Tsuboyama, T., Terada, S., Hazumi, M., Ikeda, H., Hara, K., Ishino, H., Kawasaki, T., Miyake, H., Varner, G., Martin, E., Tajima, H., Ohno, M., Fukuda, K., ... Ida, J. (2006). SOI technology and study on its dose effect. Paper presented at Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community, Honolulu, HI, United States.

SOI technology and study on its dose effect. / Ishino, Hirokazu; Arai, Y.; Ikegami, Y.; Ushiroda, Y.; Unno, Y.; Tajima, O.; Tsuboyama, T.; Terada, S.; Hazumi, M.; Ikeda, H.; Hara, K.; Ishino, H.; Kawasaki, T.; Miyake, H.; Varner, G.; Martin, E.; Tajima, H.; Ohno, M.; Fukuda, K.; Hayashi, H.; Komatsubara, H.; Ida, J.

2006. Paper presented at Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

Ishino, H, Arai, Y, Ikegami, Y, Ushiroda, Y, Unno, Y, Tajima, O, Tsuboyama, T, Terada, S, Hazumi, M, Ikeda, H, Hara, K, Ishino, H, Kawasaki, T, Miyake, H, Varner, G, Martin, E, Tajima, H, Ohno, M, Fukuda, K, Hayashi, H, Komatsubara, H & Ida, J 2006, 'SOI technology and study on its dose effect', Paper presented at Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community, Honolulu, HI, United States, 10/30/06 - 11/3/06.

Ishino, Hirokazu ; Arai, Y. ; Ikegami, Y. ; Ushiroda, Y. ; Unno, Y. ; Tajima, O. ; Tsuboyama, T. ; Terada, S. ; Hazumi, M. ; Ikeda, H. ; Hara, K. ; Ishino, H. ; Kawasaki, T. ; Miyake, H. ; Varner, G. ; Martin, E. ; Tajima, H. ; Ohno, M. ; Fukuda, K. ; Hayashi, H. ; Komatsubara, H. ; Ida, J. / SOI technology and study on its dose effect. Paper presented at Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community, Honolulu, HI, United States.

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title = "SOI technology and study on its dose effect",

abstract = "• We have started R&D for the SOI detector with OKI Elec. Ind. Co. • 2.5 × 2.5 mm2 TEG chips have been fabricated - transistor, circuit, strip and pixel • transistor TEG chip was irradiated by the proton beam up to 8 × 1014 p/cm2 - threshold shifts of -0.1∼-0.2V - leakage current of NMOS increases by 30∼100μA depending on gate length. - the back gate bias reduces the threshold voltage shift. • New submission on Dec., 2006.",

author = "Hirokazu Ishino and Y. Arai and Y. Ikegami and Y. Ushiroda and Y. Unno and O. Tajima and T. Tsuboyama and S. Terada and M. Hazumi and H. Ikeda and K. Hara and H. Ishino and T. Kawasaki and H. Miyake and G. Varner and E. Martin and H. Tajima and M. Ohno and K. Fukuda and H. Hayashi and H. Komatsubara and J. Ida",

year = "2006",

language = "English",

note = "Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community ; Conference date: 30-10-2006 Through 03-11-2006",

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TY - CONF

T1 - SOI technology and study on its dose effect

AU - Ishino, Hirokazu

AU - Arai, Y.

AU - Ikegami, Y.

AU - Ushiroda, Y.

AU - Unno, Y.

AU - Tajima, O.

AU - Tsuboyama, T.

AU - Terada, S.

AU - Hazumi, M.

AU - Ikeda, H.

AU - Hara, K.

AU - Ishino, H.

AU - Kawasaki, T.

AU - Miyake, H.

AU - Varner, G.

AU - Martin, E.

AU - Tajima, H.

AU - Ohno, M.

AU - Fukuda, K.

AU - Hayashi, H.

AU - Komatsubara, H.

AU - Ida, J.

PY - 2006

Y1 - 2006

N2 - • We have started R&D for the SOI detector with OKI Elec. Ind. Co. • 2.5 × 2.5 mm2 TEG chips have been fabricated - transistor, circuit, strip and pixel • transistor TEG chip was irradiated by the proton beam up to 8 × 1014 p/cm2 - threshold shifts of -0.1∼-0.2V - leakage current of NMOS increases by 30∼100μA depending on gate length. - the back gate bias reduces the threshold voltage shift. • New submission on Dec., 2006.

AB - • We have started R&D for the SOI detector with OKI Elec. Ind. Co. • 2.5 × 2.5 mm2 TEG chips have been fabricated - transistor, circuit, strip and pixel • transistor TEG chip was irradiated by the proton beam up to 8 × 1014 p/cm2 - threshold shifts of -0.1∼-0.2V - leakage current of NMOS increases by 30∼100μA depending on gate length. - the back gate bias reduces the threshold voltage shift. • New submission on Dec., 2006.

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M3 - Paper

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T2 - Annual Meeting of the Division of Particles and Fields of the American Physical Society, DPF 2006, and the Annual Fall Meeting of the Japan Particle Physics Community

Y2 - 30 October 2006 through 3 November 2006

ER -

SOI technology and study on its dose effect

Abstract

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ASJC Scopus subject areas

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