SOI pixel developments in a 0.15μm technology

Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, H. Miyake, Hirokazu Ishino, G. Varner, E. Martin, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi, Y. Kawai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

While the SOI (Silicon-On-Insulator) device concept is very old, commercialization of the technology is relatively new and growing rapidly in high-speed processor and low-power applications. Furthermore, features such as latch-up immunity, radiation hardness and high-temperature operation are very attractive in high energy and space applications. Once high-quality bonded SOI wafers became available in the late 90s, it opened up the possibility to get two different kinds of Si on a single wafer. This makes it possible to realize an ideal pixel detector; pairing a fully-depleted radiation sensor with CMOS circuitry in an industrial technology. In 2005 we started Si pixel R&D with OKI Electric Ind. Co., Ltd. which is the first market supplier of Fully-Depleted SOI products. We have developed processes for p+/n+ implants to the substrate and for making connections between the implants and circuits in the OKI 0.15mm FD-SOI CMOS process. We have preformed two Multi Project Wafer (MPW) runs using this SOI process. We hosted the second MPW run and invited foreign universities and laboratories to join this MPW run in addition to Japanese universities and laboratories. Features of these SOI devices and experiences with SOI pixel development are presented.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium Conference Record
Pages1040-1046
Number of pages7
Volume2
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC - Honolulu, HI, United States
Duration: Oct 27 2007Nov 3 2007

Other

Other2007 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS-MIC
CountryUnited States
CityHonolulu, HI
Period10/27/0711/3/07

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ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

Cite this

Arai, Y., Ikegami, Y., Unno, Y., Tsuboyama, T., Terada, S., Hazumi, M., Kohriki, T., Ikeda, H., Hara, K., Miyake, H., Ishino, H., Varner, G., Martin, E., Tajima, H., Ohno, M., Fukuda, K., Komatsubara, H., Ida, J., Hayashi, H., & Kawai, Y. (2007). SOI pixel developments in a 0.15μm technology. In IEEE Nuclear Science Symposium Conference Record (Vol. 2, pp. 1040-1046). [4437189] https://doi.org/10.1109/NSSMIC.2007.4437189