Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Takayoshi Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

Research output: Contribution to journalArticle

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Abstract

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalScience and Technology of Advanced Materials
Volume7
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2006

Fingerprint

Diamond
Superconducting films
Boron
Diamond films
Photoelectron spectroscopy
Diamonds
X rays
Valence bands
Dispersions
Doping (additives)
Superconductivity
Fermi level
Superconducting materials
Chemical vapor deposition
Microwaves
Plasmas
Bandwidth
Electrons
Temperature

Keywords

  • Angle-resolved photoemission
  • Band structure
  • Diamond
  • Heavily boron doped
  • Hole
  • Superconductivity

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films. / Yokoya, Takayoshi; Nakamura, T.; Matushita, T.; Muro, T.; Okazaki, H.; Arita, M.; Shimada, K.; Namatame, H.; Taniguchi, M.; Takano, Y.; Nagao, M.; Takenouchi, T.; Kawarada, H.; Oguchi, T.

In: Science and Technology of Advanced Materials, Vol. 7, No. SUPPL. 1, 2006, p. 12-16.

Research output: Contribution to journalArticle

Yokoya, T, Nakamura, T, Matushita, T, Muro, T, Okazaki, H, Arita, M, Shimada, K, Namatame, H, Taniguchi, M, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2006, 'Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films', Science and Technology of Advanced Materials, vol. 7, no. SUPPL. 1, pp. 12-16. https://doi.org/10.1016/j.stam.2006.02.014
Yokoya, Takayoshi ; Nakamura, T. ; Matushita, T. ; Muro, T. ; Okazaki, H. ; Arita, M. ; Shimada, K. ; Namatame, H. ; Taniguchi, M. ; Takano, Y. ; Nagao, M. ; Takenouchi, T. ; Kawarada, H. ; Oguchi, T. / Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films. In: Science and Technology of Advanced Materials. 2006 ; Vol. 7, No. SUPPL. 1. pp. 12-16.
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AU - Arita, M.

AU - Shimada, K.

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AU - Takenouchi, T.

AU - Kawarada, H.

AU - Oguchi, T.

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AB - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

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