Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalScience and Technology of Advanced Materials
Volume7
Issue numberSUPPL. 1
DOIs
Publication statusPublished - Nov 27 2006

Keywords

  • Angle-resolved photoemission
  • Band structure
  • Diamond
  • Heavily boron doped
  • Hole
  • Superconductivity

ASJC Scopus subject areas

  • Materials Science(all)

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