Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

T. Yokoya; T. Nakamura; T. Matushita; T. Muro; H. Okazaki; M. Arita; K. Shimada; H. Namatame; M. Taniguchi; Y. Takano; M. Nagao; T. Takenouchi; H. Kawarada; T. Oguchi

doi:10.1016/j.stam.2005.11.012

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

Research output: Contribution to journal › Article › peer-review

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Abstract

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (E_F) exhibit a systematic shift of E_F, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near E_F of a heavily boron-doped diamond superconductor is also presented.

Original language	English
Pages (from-to)	12-16
Number of pages	5
Journal	Science and Technology of Advanced Materials
Volume	7
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.stam.2005.11.012
Publication status	Published - 2006

Keywords

Angle-resolved photoemission
Band structure
Diamond
Heavily boron doped
Hole
Superconductivity

ASJC Scopus subject areas

Materials Science(all)

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10.1016/j.stam.2005.11.012

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Yokoya, T., Nakamura, T., Matushita, T., Muro, T., Okazaki, H., Arita, M., Shimada, K., Namatame, H., Taniguchi, M., Takano, Y., Nagao, M., Takenouchi, T., Kawarada, H., & Oguchi, T. (2006). Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films. Science and Technology of Advanced Materials, 7(SUPPL. 1), 12-16. https://doi.org/10.1016/j.stam.2005.11.012

Yokoya, T, Nakamura, T, Matushita, T, Muro, T, Okazaki, H, Arita, M, Shimada, K, Namatame, H, Taniguchi, M, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2006, 'Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films', Science and Technology of Advanced Materials, vol. 7, no. SUPPL. 1, pp. 12-16. https://doi.org/10.1016/j.stam.2005.11.012

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title = "Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films",

abstract = "We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.",

keywords = "Angle-resolved photoemission, Band structure, Diamond, Heavily boron doped, Hole, Superconductivity",

author = "T. Yokoya and T. Nakamura and T. Matushita and T. Muro and H. Okazaki and M. Arita and K. Shimada and H. Namatame and M. Taniguchi and Y. Takano and M. Nagao and T. Takenouchi and H. Kawarada and T. Oguchi",

note = "Funding Information: We thank A. Chainani, N. Yamada, and J. Nakamura for valuable discussions. We thank T. Kinoshita for supporting our experimental plan to do doping dependence study. We thank I. Sakaguchi for SIMS measurements. This study was supported by Grants-in-Aid for Young Scientists and for Exploratory Research from Japan Society for the Promotion of Science.",

year = "2006",

doi = "10.1016/j.stam.2005.11.012",

language = "English",

volume = "7",

pages = "12--16",

journal = "Science and Technology of Advanced Materials",

issn = "1468-6996",

publisher = "IOP Publishing Ltd.",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

AU - Yokoya, T.

AU - Nakamura, T.

AU - Matushita, T.

AU - Muro, T.

AU - Okazaki, H.

AU - Arita, M.

AU - Shimada, K.

AU - Namatame, H.

AU - Taniguchi, M.

AU - Takano, Y.

AU - Nagao, M.

AU - Takenouchi, T.

AU - Kawarada, H.

AU - Oguchi, T.

N1 - Funding Information: We thank A. Chainani, N. Yamada, and J. Nakamura for valuable discussions. We thank T. Kinoshita for supporting our experimental plan to do doping dependence study. We thank I. Sakaguchi for SIMS measurements. This study was supported by Grants-in-Aid for Young Scientists and for Exploratory Research from Japan Society for the Promotion of Science.

PY - 2006

Y1 - 2006

N2 - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

AB - We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ∼23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF) exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

KW - Angle-resolved photoemission

KW - Band structure

KW - Diamond

KW - Heavily boron doped

KW - Hole

KW - Superconductivity

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EP - 16

JO - Science and Technology of Advanced Materials

JF - Science and Technology of Advanced Materials

IS - SUPPL. 1

ER -

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Abstract

Keywords

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