Sintering of amorphous Si3N4 nanoclusters: a molecular dynamics study of stress analysis

Jinghan Wang; Kenji Tsuruta; Andrey Omeltchenko; Rajiv K. Kalia; Priya Vashishta

Sintering of amorphous Si₃N₄ nanoclusters: a molecular dynamics study of stress analysis

Jinghan Wang, Kenji Tsuruta, Andrey Omeltchenko, Rajiv K. Kalia, Priya Vashishta

Research output: Contribution to journal › Conference article

Abstract

We investigate the onset and growth of the neck between amorphous Si₃N₄ nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

Original language	English
Pages (from-to)	573-578
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	408
Publication status	Published - Dec 1 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

Fingerprint Dive into the research topics of 'Sintering of amorphous Si<sub>3</sub>N<sub>4</sub> nanoclusters: a molecular dynamics study of stress analysis'. Together they form a unique fingerprint.

Cite this

Wang, J., Tsuruta, K., Omeltchenko, A., Kalia, R. K., & Vashishta, P. (1996). Sintering of amorphous Si₃N₄ nanoclusters: a molecular dynamics study of stress analysis. Materials Research Society Symposium - Proceedings, 408, 573-578.

@article{04e0d809a2b948bd9fb62a395fc24ccd,

title = "Sintering of amorphous Si3N4 nanoclusters: a molecular dynamics study of stress analysis",

abstract = "We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.",

author = "Jinghan Wang and Kenji Tsuruta and Andrey Omeltchenko and Kalia, {Rajiv K.} and Priya Vashishta",

year = "1996",

month = dec,

day = "1",

language = "English",

volume = "408",

pages = "573--578",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Sintering of amorphous Si3N4 nanoclusters

T2 - Proceedings of the 1996 MRS Fall Symposium

AU - Wang, Jinghan

AU - Tsuruta, Kenji

AU - Omeltchenko, Andrey

AU - Kalia, Rajiv K.

AU - Vashishta, Priya

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

AB - We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

UR - http://www.scopus.com/inward/record.url?scp=0030315375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030315375&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030315375

VL - 408

SP - 573

EP - 578

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 27 November 1995 through 1 December 1995

ER -