Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor

Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart B. Martin

Research output: Contribution to journalArticle

103 Citations (Scopus)

Abstract

We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance of tunnel barriers is tunable by more than three orders of magnitude. By using the flexible control of the tunable barriers, the systematic evolution from a single charge island to double islands was clearly observed. We obtained excellent reproducibility in the gate capacitances: values on the order of 10 aF, with the variation smaller than 1 aF. This flexibility and controllability both demonstrate that the device is highly designable to build a variety of SET devices based on complementary metal-oxide-semiconductor technology.

Original languageEnglish
Article number053121
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number5
DOIs
Publication statusPublished - Feb 10 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Fujiwara, A., Inokawa, H., Yamazaki, K., Namatsu, H., Takahashi, Y., Zimmerman, N. M., & Martin, S. B. (2006). Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor. Applied Physics Letters, 88(5), 1-3. [053121]. https://doi.org/10.1063/1.2168496