Abstract
Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.
| Original language | English |
|---|---|
| Pages (from-to) | 2325-2328 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 4 B |
| Publication status | Published - 2000 |
| Externally published | Yes |
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Keywords
- Coulomb blockade
- Nano structure
- Oxidation
- Si
- Single-electron transistor
- SOI
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation. / Ono, Yukinori; Takahashi, Yasuo; Yamazaki, Kenji; Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2325-2328.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation
AU - Ono, Yukinori
AU - Takahashi, Yasuo
AU - Yamazaki, Kenji
AU - Nagase, Masao
AU - Namatsu, Hideo
AU - Kurihara, Kenji
AU - Murase, Katsumi
PY - 2000
Y1 - 2000
N2 - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.
AB - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.
KW - Coulomb blockade
KW - Nano structure
KW - Oxidation
KW - Si
KW - Single-electron transistor
KW - SOI
UR - http://www.scopus.com/inward/record.url?scp=0033723644&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033723644&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033723644
VL - 39
SP - 2325
EP - 2328
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -