Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

Original languageEnglish
Pages (from-to)2325-2328
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
DOIs
Publication statusPublished - 2000

Keywords

  • Coulomb blockade
  • Nano structure
  • Oxidation
  • SOI
  • Si
  • Single-electron transistor

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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