Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

Original languageEnglish
Pages (from-to)2325-2328
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Single electron transistors
single electron transistors
Oxidation
oxidation
logic circuits
Logic circuits
Electrons
electrons

Keywords

  • Coulomb blockade
  • Nano structure
  • Oxidation
  • Si
  • Single-electron transistor
  • SOI

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation. / Ono, Yukinori; Takahashi, Yasuo; Yamazaki, Kenji; Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2325-2328.

Research output: Contribution to journalArticle

Ono, Yukinori ; Takahashi, Yasuo ; Yamazaki, Kenji ; Nagase, Masao ; Namatsu, Hideo ; Kurihara, Kenji ; Murase, Katsumi. / Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2000 ; Vol. 39, No. 4 B. pp. 2325-2328.
@article{85b14af341234962a2c4de7e79e0bea4,
title = "Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation",
abstract = "Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.",
keywords = "Coulomb blockade, Nano structure, Oxidation, Si, Single-electron transistor, SOI",
author = "Yukinori Ono and Yasuo Takahashi and Kenji Yamazaki and Masao Nagase and Hideo Namatsu and Kenji Kurihara and Katsumi Murase",
year = "2000",
language = "English",
volume = "39",
pages = "2325--2328",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",
number = "4 B",

}

TY - JOUR

T1 - Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

AU - Ono, Yukinori

AU - Takahashi, Yasuo

AU - Yamazaki, Kenji

AU - Nagase, Masao

AU - Namatsu, Hideo

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 2000

Y1 - 2000

N2 - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

AB - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

KW - Coulomb blockade

KW - Nano structure

KW - Oxidation

KW - Si

KW - Single-electron transistor

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=0033723644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033723644&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033723644

VL - 39

SP - 2325

EP - 2328

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -