Abstract
Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.
| Original language | English |
|---|---|
| Pages (from-to) | 2325-2328 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - Jan 1 2000 |
Keywords
- Coulomb blockade
- Nano structure
- Oxidation
- SOI
- Si
- Single-electron transistor
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., & Murase, K. (2000). Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(4 B), 2325-2328. https://doi.org/10.1143/jjap.39.2325