Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Yukinori Ono; Yasuo Takahashi; Kenji Yamazaki; Masao Nagase; Hideo Namatsu; Kenji Kurihara; Katsumi Murase

doi:10.1143/jjap.39.2325

Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

Original language	English
Pages (from-to)	2325-2328
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2325
Publication status	Published - 2000

Keywords

Coulomb blockade
Nano structure
Oxidation
SOI
Si
Single-electron transistor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.2325

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Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation. / Ono, Yukinori; Takahashi, Yasuo; Yamazaki, Kenji; Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2325-2328.

Research output: Contribution to journal › Article › peer-review

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AU - Namatsu, Hideo

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 2000

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AB - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

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Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Abstract

Keywords

ASJC Scopus subject areas

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