Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Yukinori Ono; Yasuo Takahashi; Kenji Yamazaki; Masao Nagase; Hideo Namatsu; Kenji Kurihara; Katsumi Murase

doi:10.1143/jjap.39.2325

Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Yukinori Ono, Yasuo Takahashi, Kenji Yamazaki, Masao Nagase, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

Original language	English
Pages (from-to)	2325-2328
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2325
Publication status	Published - 2000

Keywords

Coulomb blockade
Nano structure
Oxidation
SOI
Si
Single-electron transistor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.39.2325

Fingerprint Dive into the research topics of 'Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation'. Together they form a unique fingerprint.

Cite this

Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation. / Ono, Yukinori; Takahashi, Yasuo; Yamazaki, Kenji; Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2325-2328.

Research output: Contribution to journal › Article › peer-review

@article{85b14af341234962a2c4de7e79e0bea4,

title = "Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation",

abstract = "Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.",

keywords = "Coulomb blockade, Nano structure, Oxidation, SOI, Si, Single-electron transistor",

author = "Yukinori Ono and Yasuo Takahashi and Kenji Yamazaki and Masao Nagase and Hideo Namatsu and Kenji Kurihara and Katsumi Murase",

year = "2000",

doi = "10.1143/jjap.39.2325",

language = "English",

volume = "39",

pages = "2325--2328",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",

number = "4 B",

}

TY - JOUR

T1 - Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

AU - Ono, Yukinori

AU - Takahashi, Yasuo

AU - Yamazaki, Kenji

AU - Nagase, Masao

AU - Namatsu, Hideo

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 2000

Y1 - 2000

N2 - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

AB - Vertical pattern-dependent oxidation, a method of fabricating single-electron transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the pattern of Si to be oxidized from the original. Using the improved method, we have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.

KW - Coulomb blockade

KW - Nano structure

KW - Oxidation

KW - SOI

KW - Si

KW - Single-electron transistor

UR - http://www.scopus.com/inward/record.url?scp=0033723644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033723644&partnerID=8YFLogxK

U2 - 10.1143/jjap.39.2325

DO - 10.1143/jjap.39.2325

M3 - Article

AN - SCOPUS:0033723644

VL - 39

SP - 2325

EP - 2328

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -