Single-electron devices formed by pattern-dependent oxidation: Microscopic structural evaluation

M. Nagase, S. Horiguchi, A. Fujiwara, Y. Ono, K. Yamazaki, H. Namatsu, Y. Takahashi

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The embedded Si structure formed by pattern-dependent oxidation (PADOX) in single-electron device (SED) is analyzed by novel microscopic methods using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface charge imaging SEM reveals the outline of the embedded Si nanowire of the electrically-measured SED. The size of the wire in the device is small enough to make a potential barrier caused by the quantum mechanical size effect. The result of the Si height in the oxidized structure estimated by AFM indicates that the huge stress induced by oxidation is applied to the narrow Si wire. The experimental results support the theoretical model of the SED fabricated by PADOX that the potential profile responsible for the SED operation is produced by two effects, the quantum mechanical size effect and the strain-induced bandgap reduction.

Original languageEnglish
Pages (from-to)144-150
Number of pages7
JournalApplied Surface Science
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 8 2002
EventProceedings of the 8th International COnference on the form (ICFSI-8) - , Japan
Duration: Jun 10 2001Jun 10 2001

Keywords

  • Atomic force microscopy
  • Band profile modulation
  • Pattern-dependent oxidation
  • Scanning electron microscopy
  • Si nanostructure
  • Single-electron device

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • Cite this

    Nagase, M., Horiguchi, S., Fujiwara, A., Ono, Y., Yamazaki, K., Namatsu, H., & Takahashi, Y. (2002). Single-electron devices formed by pattern-dependent oxidation: Microscopic structural evaluation. Applied Surface Science, 190(1-4), 144-150. https://doi.org/10.1016/S0169-4332(01)00874-1